Voltage-Gated Magnon Spin Transistor Using Multiferroic Domain Boundaries

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Solution Overview

Problem

Spin field effect transistors using magnon propagation in ferromagnetic or antiferromagnetic insulators are difficult to scale down due to the need for large magnetic fields to control magnon transport, limiting their practical application.

Innovation Solution

A voltage-controlled spin transistor design utilizing a multiferroic material channel with top and bottom gate contacts to apply a gate voltage, increasing domain boundaries and attenuating spin current transport, allowing for efficient scaling and integration with existing integrated circuit fabrication schemes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If large magnetic fields are used to control magnon transport in ferromagnetic or antiferromagnetic insulators, then spin current transport can be regulated, but the transistors become difficult to scale down to practical dimensions

Engineering Contradiction:

Improvespin current controlVSAvoidscaling capability

Core Design Contradiction:

Ease of operationVSDevice complexity

Solution Approach 1:

The patent replaces the mechanical/magnetic field control system with an electric field control system. Specifically, gate voltages applied through top and bottom gate contacts create an electric field that controls magnon transport in the antiferromagnetic channel, substituting the need for large magnetic fields with electrical control mechanisms that are more scalable and compatible with standard CMOS fabrication

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the control parameter from magnetic field strength to gate voltage. By applying voltage across the channel through gate contacts, the electric field modifies the domain boundary density in the antiferromagnetic material, thereby controlling spin current transport without requiring large magnetic fields

Inventive Principle:

Principle #35Parameter changes

2Ease of manufacture

If voltage control is implemented using top and bottom gate contacts, then scaling and integration with existing integrated circuit fabrication schemes is facilitated, but the device structure becomes more complex

Engineering Contradiction:

Improveintegration with existing fabrication schemesVSAvoidgate contact structure

Core Design Contradiction:

Ease of manufactureVSDevice complexity

Solution Approach 1:

The gate contact structure serves multiple functions: it applies voltage to control magnon transport, it provides a scalable architecture compatible with standard CMOS fabrication processes, and it enables electrical control without requiring additional magnetic field generation components. This multi-functionality justifies the increased structural complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables efficient control of spin current transport through the use of electrical voltages rather than magnetic fields, facilitating scalable and integratable spin transistors with improved switching capabilities.

Implementation Method 1

the spin current is injected into the channel and transported through the channel to the spin detector contact via magnon propagation

Methodology Applied

Scientific EffectMagnon propagation:

Implementation Method 2

the application of the gate voltages increases the density of domain boundaries in the channel and attenuates spin current transport through the channel

Methodology Applied

Scientific EffectDomain boundary formation:

Data Source

PatentUS12080783B2Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets

Publication Date: 2024.09.03 WISCONSIN ALUMNI RES FOUND

AI summary

Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.