Mask Cleaning Composition Hansen Solubility Residue Control
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Solution Overview
Problem
Existing mask cleaning compositions for display apparatuses often leave residues on the mask surface, which can deteriorate deposition quality due to high surface tension and solubility issues, leading to gas generation during subsequent deposition processes.
Innovation Solution
A mask cleaning composition with a solvent having a Hansen solubility parameter distance Ra1 of 7.35 (MPa)1/2 or less, a surface tension of 36 mN/m or less, and a boiling point of 176° C. or greater, including amide-based compounds like N,N-Diethylformamide, is used to effectively clean the mask, ensuring low residual amounts and preventing gas generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional mask cleaning composition is used, then the organic substance on the mask can be removed, but the cleaning composition remains on the mask surface in large amounts due to high surface tension, deteriorating deposition quality
Solution Approach 1:
The patent changes the surface tension parameter of the cleaning composition by selecting solvents with specific Hansen solubility parameters (Ra1 ≤ 7.35 MPa^1/2) and controlling surface tension (≤36 mN/m). This parameter modification allows the cleaning solution to remain on the mask surface in minimal amounts, preventing deposition quality deterioration while maintaining effective cleaning capability.
Solution Approach 2:
The patent identifies and replicates the essential cleaning function using a simplified solvent system based on amide compounds. By copying the core cleaning mechanism with a optimized solvent formulation, the patent achieves effective organic substance removal without the side effect of excessive residue formation that plagues conventional multi-component cleaning compositions.
2Manufacturing precision
If a cleaning solution with high solubility is used to remove organic substances, then cleaning effectiveness is improved, but the solution may generate gas during subsequent deposition processes
Solution Approach 1:
The patent changes the boiling point parameter of the cleaning composition by selecting solvents with high boiling points (≥176°C). This parameter modification ensures that the cleaning solution remains stable and does not decompose or generate gas during the subsequent deposition process, while still maintaining sufficient solubility for effective organic substance removal through optimized Hansen solubility parameters.
3Manufacturing precision
If the surface tension of the cleaning composition is reduced to minimize residue, then deposition quality is maintained, but the solubility of organic substances may be compromised
Solution Approach 1:
The patent simultaneously optimizes multiple parameters: Hansen solubility parameter distance (Ra1 ≤ 7.35 MPa^1/2) to ensure solubility, and surface tension (≤36 mN/m) to minimize residue. By coordinating these parameter changes in a unified solvent system based on amide compounds, the patent resolves the contradiction between solubility and surface tension requirements.
Solution Approach 2:
The patent creates a composite solvent system centered on amide compounds (such as N,N-Dimethylpropionamide, N,N-Diethylacetamide, or N-Butylacetamide) that inherently possesses both the required solubility characteristics and surface tension properties. This composite material approach allows simultaneous satisfaction of both solubility and low-residue requirements that cannot be achieved with single solvents.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition ensures efficient solubility of organic substances on the mask, reducing residual amounts and maintaining deposition quality, thereby extending the lifespan of display apparatuses by minimizing surface tension and avoiding gas generation during subsequent deposition processes.
Implementation Method 1
a mask cleaning composition that ensures sufficient solubility of an organic substance remaining on a mask after a deposition process
Implementation Method 2
has low surface tension, thereby remaining by a small amount on a surface of the mask
Data Source
AI summary
A mask cleaning composition for cleaning a deposition mask includes a solvent having a Hansen solubility parameter distance Ra1 of 7.35 (MPa)1/2 or less, the Hansen solubility parameter distance Ra1 being expressed by Equation below: Ra1={4×(17.9−δD)2+(9.9−δP)2+(7.4−δH)2}1/2, where δD (MPa)1/2 indicates a dispersion power term of the solvent, δP (MPa)1/2 indicates a polarity term of the solvent, and δH (MPa)1/2 indicates a hydrogen bonding force term of the solvent.