Mask Data Creation Using Cell Segmentation for Proximity Correction

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Solution Overview

Problem

Current methods for creating mask data for semiconductor fabrication, which involve process proximity effect correction (PPC), are inefficient due to long calculation times when correcting small cell patterns, especially when considering the effects of development and etching, and optical proximity effect correction alone does not adequately correct mask patterns.

Innovation Solution

A method that involves obtaining data on corrected single cell patterns, calculating and adjusting dimensions to match target values, and then applying these corrections to adjacent cells to reduce calculation time while ensuring accurate pattern transfer, using an information processing apparatus to create mask data that accounts for development and etching effects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If PPC is performed on all mask patterns including boundary portions of small cells, then manufacturing precision is improved, but calculation time increases significantly

Engineering Contradiction:
Improvepattern accuracyVSAvoidcalculation time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent segments the mask pattern into multiple cells and identifies boundary portions between adjacent cells. PPC is performed selectively only on these boundary portions rather than on all cells, thereby reducing calculation time while maintaining manufacturing precision for the overall pattern.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different processing strategies to different regions: boundary portions receive PPC treatment while interior portions of cells do not. This local quality approach ensures that correction is applied only where necessary (at boundaries) rather than uniformly across the entire pattern, reducing overall calculation time.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If PPC including development and etching effects is performed, then manufacturing precision is improved, but calculation time increases compared to optical proximity effect correction only

Engineering Contradiction:
Improvemask pattern correction accuracyVSAvoidcalculation time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent performs PPC only on boundary portions (partial action) rather than on all cells. Although the PPC method includes comprehensive effects (development and etching), applying it partially to only boundary portions achieves sufficient manufacturing precision while significantly reducing calculation time compared to applying full PPC everywhere.

Inventive Principle:
Principle #16Partial or excessive action

3Ease of manufacture

If small cells with large boundary areas are used in 1D layout technique, then ease of manufacture is improved, but calculation time for boundary PPC increases

Engineering Contradiction:
Improveexposure process simplicityVSAvoidboundary correction calculation time
Core Design Contradiction:
Ease of manufactureVSLoss of time

Solution Approach 1:

The patent segments the mask into cells and identifies boundary portions. For small cells used in 1D layout technique where boundary areas are large, the segmentation approach allows efficient identification and selective processing of boundaries, maintaining ease of manufacture while managing calculation time through targeted correction.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS8945801B2Method for creating mask data, program, information processing apparatus, and method for manufacturing mask
Publication Date: 2015.02.03 CANON KK
  • US8945801B2 patent drawing
  • US8945801B2 patent drawing
  • US8945801B2 patent drawing

AI summary

Data regarding a first corrected patterns on a single cell corrected such that an evaluation value of a pattern formed on a substrate after an image of a pattern of the single cell is projected onto a resist on the substrate and the resist is developed is obtained for each of a plurality of cells, a first evaluation value obtained by evaluating a projected image of the first corrected pattern on the single cell generated by the projection system is obtained for each of the cells, a second evaluation value obtained by, when the cells are arranged adjacent to one another, evaluating the projected images of the first corrected patterns on the cells is calculated, and creating a second corrected pattern by correcting the first corrected patterns on the cells arranged adjacent to one another such that the second evaluation value becomes close to the first evaluation value.