Mask Manufacturing Using Directed Self-Assembly for Sub-10 nm Features
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Solution Overview
Problem
The manufacturing of advanced masks for lithography with sub-resolution assist features is computationally challenging and increases data volume and write-time, as existing methods struggle to produce features smaller than 10 nm within the resolution limits of mask fabrication processes.
Innovation Solution
A method utilizing Directed Self-Assembly (DSA) patterning with block co-polymer (BCP) materials to form assist mask features, which are periodically distributed, allowing for the creation of features smaller than 10 nm and reducing data volume and write-time, while protecting the absorber layer from contamination during processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used to manufacture masks with assist features, then the mask can be produced, but the feature size cannot be reduced below 10 nm due to resolution limits
Solution Approach 1:
The patent segments the mask manufacturing process into two distinct stages: first, creating master patterns at larger dimensions (above resolution limits) using conventional lithography; second, using directed self-assembly to generate the fine assist features (below 10 nm) through spontaneous organization of block copolymer materials. This segmentation allows each stage to operate within its optimal resolution regime.
Solution Approach 2:
The directed self-assembly process enables the block copolymer material to automatically organize into the desired sub-10 nm assist feature patterns without requiring direct lithographic patterning. The material's inherent self-organizing properties are harnessed to create the fine features, eliminating the need for high-resolution lithography tools for this specific task.
2Manufacturing precision
If sub-resolution assist features smaller than 10 nm are manufactured using conventional methods, then feature size is reduced, but data volume and write-time increase significantly
Solution Approach 1:
The directed self-assembly process allows the material to automatically generate the sub-10 nm assist features through spontaneous organization, eliminating the need for computationally intensive lithographic patterning and data writing. This self-organizing mechanism dramatically reduces both data volume requirements and write-time while achieving the desired feature sizes.
Solution Approach 2:
The patent changes the fundamental parameter of how features are created: instead of using top-down lithographic writing with associated data overhead, it transitions to a bottom-up self-assembly process where the material's physical and chemical properties drive pattern formation. This parameter change from computational to physical patterning eliminates the data volume and write-time penalties.
3Manufacturing precision
If advanced masks with small features are manufactured, then feature size is reduced, but the absorber layer becomes vulnerable to contamination during processing
Solution Approach 1:
The patent performs the directed self-assembly process and forms the assist features while the absorber layer is still protected by the patterned layer. This preliminary formation of fine features before absorber layer exposure prevents contamination risks that would otherwise occur during subsequent handling and processing steps.
Solution Approach 2:
The patterned layer serves as an intermediary protective barrier between the absorber layer and the external environment during the directed self-assembly process. This intermediate structure allows the fine assist features to be formed in the resist material while the absorber layer remains shielded, preventing contamination until the patterned layer is safely removed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and cost-effective manufacturing of masks with assist features smaller than 8 nm, minimizing write-time and data volume expansion, and maintaining pattern fidelity by using DSA patterning to create assist features beyond conventional resolution limits, thus simplifying the mask fabrication process.
Implementation Method 1
inducing phase separation of a block co-polymer (BCP) material, provided in the at least one opening, into a first component and a second component
Implementation Method 2
The at least one assist mask feature may be formed by performing a directed self-assembly (DSA) patterning process
Data Source
AI summary
A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.