Mask Pattern Formation via Ionic Bonding and Acid Diffusion
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Solution Overview
Problem
The resolution limit of photolithography processes restricts the formation of minute patterns with narrow pitches in semiconductor devices, necessitating alternative methods for creating precise mask patterns.
Innovation Solution
A double patterning process involving the formation of first and second mask patterns, where preliminary capping layers are ionically bonded and treated with acid to create capping layers with different solubilities, allowing for the adjustment and etching of mask patterns to achieve desired minute patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used to form patterns, then manufacturing process is simple, but pattern pitch cannot be reduced below resolution limit
Solution Approach 1:
The patent applies segmentation by dividing the pattern formation into multiple stages: first forming initial patterns, then creating preliminary capping layers, followed by acid treatment to form capping layers with different solubilities, and finally forming second mask patterns. This multi-stage segmentation enables pitch reduction below the photolithography resolution limit while managing process complexity through systematic breakdown of steps.
Solution Approach 2:
The patent employs preliminary action by forming preliminary capping layers on the first mask patterns before the final pattern formation. These preliminary layers are then treated with acid to create capping layers with controlled solubilities, preparing the structure in advance for subsequent etching and pattern definition, thereby achieving precise pitch control.
2Manufacturing precision
If double patterning process is used to overcome resolution limit, then pattern pitch can be reduced, but process complexity increases
Solution Approach 1:
The patent applies parameter changes by controlling the solubility of capping layers through acid treatment. By adjusting the solubility parameter of the capping layers relative to the mask patterns, the process enables selective removal and precise pattern formation. This parameter control allows pitch reduction while managing complexity through chemical property manipulation rather than purely mechanical process steps.
3Length of moving object
If mask pattern width is reduced for higher integration, then element size decreases, but pattern formation becomes more difficult
Solution Approach 1:
The patent uses capping layers as intermediary materials between the mask patterns and the final pattern formation. These capping layers, with their controlled solubilities, act as mediators that facilitate the transfer and refinement of patterns at reduced dimensions. The intermediary layers enable precise width control of mask patterns while simplifying the overall formation process through selective chemical reactions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of minute patterns with uniform electrical characteristics and reduced process complexity, overcoming the limitations of traditional photolithography by allowing for precise control of pattern widths and pitches.
Implementation Method 1
irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns
Implementation Method 2
applying an acid to the second preliminary capping layers to form capping layers
Implementation Method 3
Removing the capping layers may include applying an alkaline solution to the capping layers
Implementation Method 4
Forming the second mask patterns may include adjusting a width thereof by diffusion of acid from the capping layers
Data Source
AI summary
A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.