Mask Pattern Generation Using Segmented Evaluation
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Solution Overview
Problem
Conventional methods for generating mask patterns face challenges in accurately evaluating and optimizing images formed on substrates, particularly when polygons overlap or contact, leading to increased calculation time and inappropriate results due to inappropriate evaluation positions.
Innovation Solution
A method that groups overlapping or contacting polygons, sets evaluation positions at specific points excluding the overlapping segments, and repeatedly calculates and corrects the pattern image to achieve target dimensions and position shifts, optimizing parameters to improve image formation on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If evaluation position is set at midpoint between apexes of polygon in conventional method, then evaluation can be performed, but calculation time becomes longer and inappropriate calculation result is output when polygons overlap or contact
Solution Approach 1:
The patent segments the evaluation process by identifying and excluding overlapping line segments from evaluation position selection. When polygons overlap or contact, the method divides the boundary into non-overlapping segments and selects evaluation positions only from valid segments, avoiding redundant calculations on overlapping portions.
Solution Approach 2:
Instead of selecting evaluation positions from all line segments and filtering out inappropriate ones, the patent inverts the approach by first identifying overlapping segments and then selecting evaluation positions only from the remaining non-overlapping segments. This prevents wasted calculations on invalid positions from the start.
2Adaptability or versatility
If conventional two-dimensional layout pattern is used, then design flexibility is maintained, but resolution of pattern becomes difficult due to reduction in factor k1
Solution Approach 1:
The patent introduces a third dimension (depth or layering) in pattern design by enabling overlapping polygons to represent three-dimensional structures or multi-layer features. This allows the system to maintain two-dimensional layout simplicity while achieving three-dimensional pattern resolution capabilities, effectively increasing the factor k1 by utilizing vertical stacking rather than only horizontal expansion.
3Productivity
If a plurality of pattern elements is arranged to overlap or contact for cutting neighboring lines, then one-dimensional layout technique can be implemented, but inappropriate evaluation position leads to increased calculation time
Solution Approach 1:
The patent merges overlapping or contacting polygons into unified evaluation units. When multiple pattern elements overlap or contact to form a continuous structure, the method combines them into a single evaluation group and selects evaluation positions at the outer boundaries of the merged structure, reducing the total number of evaluation positions required compared to treating each polygon separately.
Data Source
AI summary
A method for generating a pattern of a mask includes obtaining data of a plurality of polygons representing a plurality of pattern elements, grouping polygons which overlap or contact with each other among the plural polygons in one group, not setting an evaluation position for evaluating an image of a pattern of the one group on a line segment of sides which overlap or contact with each other among sides of the polygon of the one group, and setting an evaluation position at a portion except for the line segment, and repeating calculating the image of the pattern of the one group, evaluating the calculated image at the set evaluation position, and correcting the pattern based on a result of the evaluating, and generating the pattern of the mask based on a result of the repeating step.