Mask Plate Fanout Lead Line Width Compensation
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Solution Overview
Problem
The photolithography process in display panel manufacturing results in uneven signal transmission due to differences in resistance levels between fanout leads, caused by difficulties in achieving pre-designed curve portions with consistent line widths, leading to increased line widths and resistance disparities.
Innovation Solution
A mask plate with a fanout lead pattern featuring S-shaped curve portions and varying line widths, where the line width at the curve portions is smaller than the predetermined width, ensuring equal effective lengths and reducing resistance differences between fanout leads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the curve portion of fanout lead is designed to increase effective length, then the resistance difference between fanout leads is reduced, but the line width at curve portion increases due to photolithography limitations
Solution Approach 1:
The patent applies local quality by making the line width at the curve portion smaller than the line width at other portions. This local variation compensates for the increased effective length at the curve portion, thereby maintaining uniform resistance across all fanout leads despite the geometric differences
Solution Approach 2:
The patent changes the line width parameter locally at the curve portion to compensate for the increased effective length. By adjusting this geometric parameter, the resistance uniformity is maintained despite the curved geometry introducing additional length
2Reliability
If the middle portions of fanout leads are curved to increase effective length, then resistance difference with outer periphery fanout leads is reduced, but the curve portion fails to achieve pre-designed line width
Solution Approach 1:
The patent deliberately introduces local quality variation by making the line width at the curve portion smaller than at other portions. This local adjustment compensates for the increased effective length and maintains resistance uniformity across all fanout leads
Solution Approach 2:
The patent applies preliminary anti-action by pre-compensating for the expected line width increase at curve portions through exposure optimization. The mask plate and exposure parameters are designed in advance to counteract the lateral light effect, ensuring the actual line width matches the design intent
3Ease of manufacture
If conventional photolithography process is used, then the exposure, development and etching can be completed, but the curve portion line width becomes greater than designed due to lateral light exposure
Solution Approach 1:
The patent applies preliminary anti-action by designing the mask plate and exposure parameters in advance to counteract the lateral light effect. The optimized exposure parameters ensure that the photoresist at curve portions receives appropriate exposure dosage, preventing the line width increase caused by lateral light
Solution Approach 2:
The patent changes the exposure parameters (such as exposure time, intensity, or wavelength) to compensate for the lateral light effect at curve portions. By adjusting these parameters, the photosensitive reaction is controlled to achieve the desired line width accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces resistance differences between fanout leads by maintaining consistent line widths and effective lengths, thereby eliminating display unevenness and improving signal transmission.
Implementation Method 1
the light path is difficult to achieve perfectly collimated, there is a small amount of lateral light. The exposure area will be irradiated by collimated light and the lateral light at the same time.
Implementation Method 2
the photosensitive intensity of the A area is weaker than other exposed areas, and the chemical reaction of the photoresist is slower
Implementation Method 3
the chemical reaction of the photoresist is slower such that when developing and etching in the subsequent steps, the developing rate and the etching rate of the A area is slower than other exposed areas
Implementation Method 4
etching the metal layer, wherein, the metal without the protection of the photoresist is etched away, and the remaining metal forms the circuit
Data Source
AI summary
A manufacturing method of a mask plate and an array substrate is provided. The mask plate is for manufacturing fanout leads in a non-effective display area on an array substrate. The mask plate includes a fanout lead pattern having a plurality of fanout impression lines, wherein each fanout impression line has a predetermined line width, and each of some of the fanout impression lines has at least one curve portion, wherein for one fanout impression line, a line width of the at least one curve portion is smaller than the predetermined line width of the fanout impression line. A manufacturing method of an array substrate utilizes the foregoing mask plate to manufacture the array substrate.