Maskless Exposing Device for Thin Film Transistor Substrate Fabrication
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Solution Overview
Problem
The existing methods for manufacturing thin film transistor (TFT) substrates are inefficient due to the use of multiple masks, which increases production time and cost, and results in stitch deficiencies that degrade the quality of large-sized liquid crystal displays (LCDs).
Innovation Solution
A method using a maskless exposing device to form the TFT substrate by sequentially exposing and developing photoresist layers without masks, reducing the need for expensive masks and preventing stitch deficiencies through overlapping exposure regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used in the photolithography process, then the TFT array can be formed with precise patterns, but the production time increases and productivity decreases
Solution Approach 1:
The patent extracts and removes the mask component from the photolithography process, replacing it with a maskless exposing device that directly projects patterns onto the photoresist layer. This eliminates the need for multiple physical masks while maintaining pattern precision through digital pattern generation and optical projection systems.
Solution Approach 2:
The patent replaces the mechanical mask handling system with an optical projection system. Instead of physically positioning and aligning multiple masks, the system uses optical fields and digital control to project patterns directly, substituting mechanical operations with optical and computational methods to improve productivity.
2Manufacturing precision
If multiple expensive masks are used for fabricating the TFT array, then precise patterns can be achieved, but the manufacturing cost increases
Solution Approach 1:
The patent replaces expensive, durable masks with a maskless system that uses inexpensive, disposable digital pattern data. Instead of investing in costly physical masks that require maintenance and replacement, the system uses digital files that can be easily modified and reused without degradation, significantly reducing manufacturing costs.
Solution Approach 2:
The patent changes the fundamental parameter of pattern storage from physical form (masks) to digital form (data files). This parameter change allows patterns to be stored, transmitted, and modified as digital information, eliminating the need for expensive physical mask fabrication and reducing overall manufacturing costs while maintaining precision.
3Productivity
If large-sized substrates are used to enhance productivity, then more pixels can be produced per substrate, but stitch deficiencies occur at the boundaries of exposure regions
Solution Approach 1:
The patent creates a universal exposing system that can handle substrates of various sizes through a single maskless exposing device. The system uses digital pattern projection that can be scaled and adjusted to cover entire large substrates in one exposure, eliminating the need for multiple stitched exposures and their associated alignment problems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances productivity and reduces manufacturing costs by eliminating the need for expensive masks and prevents stitch deficiencies, thereby improving the quality of TFT substrates and LCDs.
Implementation Method 1
exposing a first amount of light onto the photoresist at first regions, excluding a second region where data lines and thin film transistors are to be formed, by using a maskless exposing device, exposing a second amount of light onto the photoresist at third regions, where channels of the thin film transistors are to be formed
Data Source
AI summary
A method for manufacturing a thin film transistor substrate using a maskless exposing device includes forming a data metal layer on a substrate having a gate pattern and common electrodes along with gate insulation layers, active layers, and ohmic contact layers for a thin film transistors; forming a photoresist on the data metal layer; exposing a first amount of light onto the photoresist at first regions, excluding a second region where data lines and thin film transistors are to be formed, by using a maskless exposing device; exposing a second amount of light onto the photoresist at third regions, where channels of the thin film transistors are to be formed, wherein the second amount of light is smaller than the first amount of light; and developing the first, second and third regions of the photoresist.