MBCFET Separation Structure With Layered Nanosheet Spacing
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Solution Overview
Problem
The complexity of forming a separation structure with a relatively large thickness in semiconductor devices increases the difficulty of the manufacturing process, particularly in multi-bridge channel field effect transistors (MBCFETs), where the thickness and material differences between layers can affect the device's performance and scalability.
Innovation Solution
A semiconductor device design that includes a separation structure with multiple layers, where the second layer contacts both the first and third layers, and each of the first and third layers consists of the same material, while the second layer is made of a different material, reducing the process complexity and enhancing the device's structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separation structure with relatively large thickness is formed in a multi-bridge channel field effect transistor, then the device performance and scalability are improved, but the manufacturing process complexity increases
Solution Approach 1:
The separation structure is divided into multiple distinct layers (first layer, second layer, third layer) with different materials. This segmentation allows each layer to be formed using optimized deposition processes appropriate for its specific material requirements, thereby improving overall device performance while managing manufacturing complexity through systematic layer-by-layer fabrication
Solution Approach 2:
The separation structure employs composite materials with different properties in different layers. The first layer, second layer, and third layer each use materials selected for their specific functional advantages, creating a composite structure that achieves superior device performance and scalability characteristics that would not be possible with a single uniform material
2Stability of the object's composition
If the separation structure includes multiple layers with different materials, then the structural integrity is enhanced, but the manufacturing process difficulty increases
Solution Approach 1:
The separation structure is divided into multiple distinct layers (first layer, second layer, third layer) with different materials. This segmentation allows each layer to be formed using optimized deposition processes appropriate for its specific material requirements, thereby improving overall device performance while managing manufacturing complexity through systematic layer-by-layer fabrication
Solution Approach 2:
Different regions of the separation structure (different layers) are assigned different material compositions tailored to their specific functional requirements. The first layer, second layer, and third layer each have locally optimized material properties that enhance structural integrity where needed while simplifying the manufacturing process for that specific layer
Data Source
AI summary
A semiconductor device includes a substrate, an active pattern on the substrate, a plurality of lower nanosheets stacked on the active pattern, a separation structure spaced apart from the plurality of lower nanosheets in the vertical direction and disposed on the plurality of lower nanosheets, and including first to third layers sequentially stacked on each other, a plurality of upper nanosheets spaced apart from the separation structure in the vertical direction and disposed on the separation structure, and stacked on the separation structure, and a gate electrode extending in a second horizontal direction different from the first horizontal direction, and surrounding the separation structure, each of the plurality of lower nanosheets, and each of the plurality of upper nanosheets. The first and third layers include the same material, and each of the first layer and the third layer includes a material different from a material of the second layer.