3D Memory Cell Air-Gap Isolation for Reduced Cross-Coupling
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Solution Overview
Problem
The integration of semiconductor devices is limited by the area occupied by unit memory cells, and existing three-dimensional semiconductor devices face challenges in improving operational reliability and reducing cross-coupling between stacked memory cells.
Innovation Solution
A semiconductor device structure featuring alternately stacked conductive and insulating layers, with air gaps between memory patterns and a sealing layer, and a manufacturing method that includes forming sacrificial patterns, blocking layers, and oxidizing sacrificial liners to create air gaps, which reduces cross-coupling between memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If memory cells are stacked in three-dimensional structure to improve integration density, then the area occupied by unit memory cells is reduced, but cross-coupling between stacked memory cells increases and operational reliability deteriorates
Solution Approach 1:
The patent introduces air gaps that segment the continuous stack structure into isolated sections. These air gaps physically divide the stacked memory cells, preventing electrical interference and cross-coupling between adjacent cells while maintaining the three-dimensional integration architecture. The segmentation allows each memory cell to operate independently, thereby improving reliability without sacrificing integration density.
Solution Approach 2:
The air gaps act as intermediary elements between stacked memory cells. These gaps serve as insulating mediators that prevent direct electrical interaction between adjacent memory cells, thereby eliminating cross-coupling effects. The intermediary air gaps allow the stacked structure to maintain both high integration density and operational reliability by mediating the interaction between neighboring cells.
2Ease of manufacture
If conventional manufacturing methods are used for three-dimensional semiconductor devices, then fabrication processes are simplified, but cross-coupling between memory cells cannot be effectively reduced
Solution Approach 1:
The patent incorporates air gap formation as an early step in the manufacturing process, before subsequent deposition and fabrication steps. By preliminarily creating the air gaps that define the boundaries between memory cells, the process ensures that cross-coupling is prevented from the outset. This preliminary action maintains ease of manufacture while effectively eliminating the harmful cross-coupling effect throughout the remaining fabrication steps.
Solution Approach 2:
The patent utilizes air gaps as porous/void structures within the stacked memory device. These porous regions (air-filled spaces) provide electrical isolation between memory cells while maintaining structural integrity. The use of air gaps as porous materials allows for effective reduction of cross-coupling without adding complex manufacturing steps, as the air gaps can be formed through standard etching and deposition processes.
Data Source
AI summary
A semiconductor device includes: a gate structure including conductive layers and insulating layers, which are alternately stacked; a channel layer penetrating the gate structure; memory patterns respectively located between the channel layer and the conductive layers; air gaps located between the memory patterns; and a sealing layer including first parts respectively including the air gaps and a second part extending between the memory patterns.