Semiconductor Memory Bit Inversion for Write Efficiency
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Solution Overview
Problem
Nonvolatile semiconductor memory devices with resistance variable elements face performance deterioration due to slow state changes and instability, affecting data writing and reading efficiency.
Innovation Solution
A semiconductor memory device with a memory cell array, read/write circuit, and operational circuit that inverts data bits based on a flag to minimize rewrite operations and stabilize data states, reducing the number of bits changed during writing and reading, and includes a controller for error checking and correction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the variable resistive element undergoes state change for data storage, then data can be stored nonvolatilely, but the characteristics deteriorate and the speed of state change becomes extremely slow
Solution Approach 1:
The patent applies preliminary action by pre-calculating the inverted data pattern before writing to memory. The controller determines which bits need to be inverted based on the current state and desired state, then pre-prepares the inverted data. This allows the write operation to proceed more efficiently by minimizing the actual state changes needed during the memory write process, thereby improving write speed while maintaining nonvolatile storage capability.
2Adaptability or versatility
If the variable resistive element undergoes repeated state changes, then data can be rewritten, but the characteristics deteriorate due to increased rewrite operations
Solution Approach 1:
The patent applies inversion by flipping the data bits before writing them to memory. When reading, the stored inverted data is inverted again to recover the original data. This technique reduces the number of actual state changes in the variable resistive element because writing inverted data may require fewer or less severe write operations compared to writing the original data pattern directly, thereby reducing cumulative damage from repeated writes while maintaining full rewrite capability.
3Reliability
If certain length data is written to memory cells, then data storage is achieved, but error checking and correction require additional processing time
Solution Approach 1:
The patent applies preliminary action by performing error detection and correction operations during the data read process itself, rather than as a separate subsequent step. The read circuit detects errors in the read data and performs correction if needed, then outputs the corrected data. This integration of error handling into the read operation reduces overall processing time while maintaining high data accuracy, as the error checking and correction are performed concurrently with data retrieval rather than sequentially after it.
Data Source
AI summary
A semiconductor memory device comprises a memory cell array including a plurality of memory cells arranged at intersections of word lines and bit lines; a read/write circuit operative to execute data read/write to the memory cell; and an operational circuit operative to compare certain length data read out by the read/write circuit from plural ones of the memory cells with certain length data to be written in the plural memory cells to make a decision, and create a flag representing the decision result. The read/write circuit inverts each bit in the certain length data to be written in the memory cells in accordance with the flag, and writes only rewrite-intended data of the certain length data and the flag. The read/write circuit reads the certain length data together with the flag corresponding thereto, and inverts each bit in the certain length data in accordance with the flag.


