Memory Bit Line Layout for Narrow Sense Amplifier Modules
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The complex bit line wire structure in semiconductor memory devices due to individual memory cells being electrically connected to sense amplifier units complicates the design and potentially affects efficiency.
Innovation Solution
The semiconductor memory device incorporates a sense amplifier module with a narrower width than the memory cell array, utilizing inter-cell and intra-module wires to connect memory cells and sense amplifier units efficiently, reducing complexity and improving connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If individual memory cells are electrically connected to corresponding sense amplifier units, then data reading function is achieved, but bit line wire structure becomes complicated
Solution Approach 1:
The patent divides the sense amplifier module into multiple sense amplifier units (first sense amplifier unit, second sense amplifier unit, etc.), each handling specific memory cells. This segmentation allows organized connection management where each unit connects to its designated memory cells through structured bit lines, reducing overall wiring complexity while maintaining individual connection functionality.
Solution Approach 2:
The patent merges multiple memory cells (first memory cell, second memory cell, third memory cell, fourth memory cell) to be handled by a limited number of sense amplifier units. By combining the handling responsibility of multiple cells into fewer amplifier units, the number of required wire connections is reduced, simplifying the bit line wire structure while preserving data reading capability.
2Productivity
If sense amplifier module width is narrower than memory cell array width, then device integration is improved, but wire connection length increases
Solution Approach 1:
The patent utilizes three-dimensional stacking architecture where memory cell arrays are positioned at different vertical levels (first level, second level) above the sense amplifier module. This dimensional arrangement allows bit lines to connect vertically between levels, effectively reducing horizontal wire connection lengths and enabling higher integration density without proportionally increasing wire length.
Solution Approach 2:
The patent implements a nested structure where multiple memory cell arrays are stacked vertically above the sense amplifier module, with bit lines penetrating through intermediate levels to establish connections. This nesting approach allows compact integration by embedding connection paths within the vertical stack, reducing the overall footprint and wire length requirements.
Data Source
AI summary
In a semiconductor memory device according to an embodiment, a second bit line includes a second inter-cell module wire that is electrically connected to a second memory cell and extends in a first direction toward a sense amplifier module from a position overlapping the second memory cell in an up-down direction, and a second intra-module wire that extends in a second direction side by side with the first intra-module wire in the first direction at a position close to the first intra-module wire and electrically connects the second inter-cell module wire and a second sense amplifier unit.