Read-Only Memories TRIZ Cases
- FinFET MTP Memory Cell With Dual Storage Nodes for eNVM Scaling
A FinFET MTP cell with dual storage nodes and metal gates overcomes thin-oxide and metal-gate scaling bottlenecks in embedded non-volatile memory.
- Semiconductor Memory Charge-Discharge Structure for Arc-Free Etching
A stepped discharge portion penetrating the source line drains positive charge during high-aspect-ratio etching to suppress arcing and improve yield.
- Elliptical Contact Layout for Bent 3D NAND Pillar Alignment
Tailored reticles and elliptical contacts compensate for pillar bending in stacked memory, improving overlap, conductivity, and reliability.
- 3D Memory Channel Structure for Stable GIDL During Erase
Undoped channel regions beside select lines stabilize GIDL current during erase and improve reliability in highly stacked 3D memory.
- FinFET MTP Memory Cell With Nitride Storage and Metal Gate
A FinFET MTP cell uses a silicon nitride storage gate and metal control gate to improve programming, erasing, and read-state separation.
- Stacked Lateral Semiconductor Structures via Epitaxial Overgrowth
Alternating sacrificial layers and confined epitaxial growth form dense stacked lateral semiconductor structures with fewer lithography and annealing steps.