Memory Block Cleaning Using Periodic Force Write Operations
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing memory devices face challenges in efficiently cleaning memory blocks due to endurance issues, where frequent write operations can lead to wear-out and disturbances in memory cells, necessitating a balanced approach between normal and force write operations to maintain performance and longevity.
Innovation Solution
Implementing a system that alternates between normal write and force write approaches for memory block cleanings, where normal writes minimize wear and disturbances, and occasional force writes enhance endurance, using a combination of normal and force write operations for every set quantity of cleanings to achieve optimal memory cell health.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If normal write operations are used for memory block cleanings, then wear and disturbances to memory cells are minimized, but cleaning effectiveness and endurance are reduced
Solution Approach 1:
The patent implements periodic force write operations interspersed among normal write operations during memory block cleanings. Specifically, after a threshold number of normal writes (e.g., 99 normal writes followed by 1 force write), a force write operation is performed to refresh memory cells and prevent wear-out, thereby maintaining both cleaning effectiveness and memory cell endurance over time
2Reliability
If force write operations are used for memory block cleanings, then memory cell endurance is enhanced, but wear and disturbances increase
Solution Approach 1:
The patent applies force write operations partially and selectively rather than continuously. By triggering force writes only after accumulating a threshold number of normal writes (e.g., every 100th write), the system achieves sufficient endurance enhancement while minimizing unnecessary wear and disturbances from excessive force write operations
3Productivity
If frequent write operations are performed, then cleaning speed is improved, but memory cell wear-out increases
Solution Approach 1:
The patent employs periodic force write operations at strategically determined intervals (after threshold counts of normal writes) to refresh memory cells and prevent wear-out. This periodic intervention maintains high cleaning speed through efficient normal writes while periodically addressing wear concerns, thereby balancing productivity and memory cell longevity
Data Source
AI summary
Methods, systems, and devices for cleaning memory blocks using multiple types of write operations are described. A counter may be incremented each time a write command is received. In response to the counter reaching a threshold, the counter may be reset and a flag may be set. Each time a cleaning of a memory block is to take place, the flag may be checked. If the flag is set, the memory block may be cleaned using a second type of cleaning operation, such as one using a force write approach. Otherwise, the memory block may be cleaned using a first type of cleaning operation, such as one using a normal write approach. Once set, the flag may be reset after one or more memory blocks are cleaned using the second type of cleaning operation.