Memory Block State Checking for Bad Block Operation Stop

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Solution Overview

Problem

Existing memory devices face inefficiencies due to the presence of bad memory blocks that are not effectively identified and managed during operations, leading to potential failure and reduced performance.

Innovation Solution

The implementation of peripheral circuits that read and parse state information from a storage structure, such as an SRAM, to determine whether a memory block is a bad block, generating stop signals to prevent operations on identified bad blocks, and allowing operations on normal blocks, thereby simplifying the circuitry and optimizing resource allocation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If operations are performed on all memory blocks without checking their state, then productivity is maintained, but reliability deteriorates due to potential failures from operating on bad blocks

Engineering Contradiction:
Improvememory operation reliabilityVSAvoidmemory operation efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies preliminary action by checking the state information of memory blocks before performing operations. The peripheral circuits read the state information from the storage structure in advance to determine whether each memory block is a bad block or normal block, and only then proceed to generate appropriate operation signals. This prevents operations on bad blocks while maintaining efficient operations on normal blocks.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If state information checking is implemented for all memory blocks, then reliability improves, but device complexity increases due to additional circuits and storage structures

Engineering Contradiction:
Improvememory operation reliabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the state information storage function into the existing peripheral circuits of the memory device. The storage structure is integrated within the peripheral circuits, which already contain control logic for memory operations. This combining approach avoids adding separate complex subsystems while achieving reliable bad block identification and management.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If comprehensive state information storage is implemented, then reliability improves, but area increases due to additional storage structure

Engineering Contradiction:
Improvememory operation reliabilityVSAvoidperipheral circuit area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The storage structure in the peripheral circuits serves multiple functions: it stores state information for bad block identification, provides address information for locating memory blocks, and enables the control logic to make informed operation decisions. This multi-functionality reduces the need for separate dedicated storage components, optimizing area utilization while maintaining reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20260037426A1Memory device, operating method and memory system
Publication Date: 2026.02.05 YANGTZE MEMORY TECH CO LTD
  • US20260037426A1 patent drawing
  • US20260037426A1 patent drawing
  • US20260037426A1 patent drawing

AI summary

Implementations of the present application provide a memory device, an operating method and a memory system. Here, the memory device includes: a memory cell array including at least one memory block; peripheral circuits coupled to the memory blocks and including a storage structure, wherein the peripheral circuit are configure to: receive and parse an operation command to obtain at least one address information; read, from the storage structure, the state information of the corresponding memory block to be operated according to each address information with the state information indicates whether the memory block is a bad block; and generate a stop signal in response to the state information of a memory block to be operated indicating that the memory block to be operated is a bad block, wherein the stop signal indicates to cease performing the operations on the memory block to be operated.