Memory Programming Circuit With Selective Boost Voltage Switching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently programming data without exceeding a predetermined number of errors, particularly when relying on external voltage sources, and there is a need for adaptive voltage management to optimize programming efficiency and reduce errors.
Innovation Solution
The semiconductor system dynamically switches between different data programming methods based on the number of errors encountered, using either the external power supply voltage or a boosted voltage from a charge pump circuit, depending on the voltage range and error conditions, to minimize errors and reduce the need for continuous use of the charge pump circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single high-capacity charge pump circuit is used to supply programming current to all memory cell strings, then the programming speed and current supply capability are improved, but the power consumption increases and the circuit complexity increases
Solution Approach 1:
The patent divides the memory cell strings into multiple groups, with each group having its own dedicated charge pump circuit. This segmentation allows the system to activate only the charge pumps needed for the currently programmed group, reducing overall power consumption while maintaining high programming speed for active groups. The programming circuit selectively enables first charge pump circuits for first memory cell strings or second charge pump circuits for second memory cell strings based on programming requirements.
Solution Approach 2:
The patent implements dynamic control of charge pump circuits by selectively activating or deactivating specific charge pump circuits based on which memory cell strings require programming. The programming circuit dynamically switches between using first charge pump circuits and second charge pump circuits, optimizing power consumption in real-time while maintaining the ability to deliver high current when needed for active programming operations.
2Productivity
If a single high-capacity charge pump circuit is used to supply programming current to all memory cell strings, then the programming speed and current supply capability are improved, but the circuit complexity increases
Solution Approach 1:
The patent segments the charge pump circuits into multiple independent units (first charge pump circuits and second charge pump circuits), each capable of independently supplying current to specific memory cell string groups. This modular segmentation reduces circuit complexity by allowing independent control and simpler routing compared to a single high-capacity pump, while still achieving high programming speeds through parallel operation of multiple segmented units.
Solution Approach 2:
The patent employs dynamic switching control to select which charge pump circuits are active based on programming needs. This dynamic control simplifies the overall circuit architecture by avoiding the need for a single complex high-capacity pump, instead using multiple simpler pumps that can be selectively activated. The programming circuit dynamically configures the active charge pump set, reducing circuit complexity while maintaining high productivity.
3Productivity
If the programming current is increased to improve programming speed, then the programming efficiency is improved, but the disturbance to adjacent memory cell strings increases
Solution Approach 1:
The patent segments memory cell strings into distinct groups (first memory cell strings and second memory cell strings) that are physically or logically separated and served by dedicated charge pump circuits. When programming one group, only the corresponding charge pump circuits are activated, which limits the current distribution to that specific group. This segmentation prevents high programming current from disturbing adjacent memory cell strings in other groups, maintaining high programming efficiency while reducing harmful interference.
Solution Approach 2:
The patent applies local quality by providing dedicated charge pump circuits for different memory cell string groups, ensuring that high programming current is localized to only the strings being programmed. The first charge pump circuits supply current locally to first memory cell strings, and second charge pump circuits supply current locally to second memory cell strings. This localized current supply achieves high programming efficiency for active strings while preventing disturbance to adjacent strings through spatial and electrical isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances programming efficiency by reducing errors, optimizing circuit area, and improving throughput while allowing versatile operation across varying power supply conditions.
Implementation Method 1
a charge pump circuit for boosting a voltage of an external power supply
Data Source
Figure 1
Figure 2
Figure 3A~3B
AI summary
A semiconductor device capable of changing a data programming process in a simple manner according to a situation is provided. The semiconductor device includes a plurality of memory cells, a programming circuit for supplying a programming current to the memory cell, and a power supply circuit for supplying power to the programming circuit. The power supply circuit includes a charge pump circuit for boosting the external power supply, a voltage of the external power supply according to the selection indication, and a selectable circuit capable of switching the boosted voltage boosted by the charge pump circuit. The control circuit further includes a control circuit for executing data programming processing by the programming circuit by switching the selection indication.