Semiconductor Memory Bridge Defect Detection via Sense Amplifier Segmentation
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Solution Overview
Problem
Conventional semiconductor memory devices face challenges in accurately detecting bridge defects between adjacent memory cells due to coupling phenomena that occur when sense amplifiers are enabled, leading to potential data loss and improper detection.
Innovation Solution
A method and device where a first sense amplifier is maintained in an enabled state while a second sense amplifier is disabled, allowing for accurate detection of bridge defects by reading data from memory cells connected to both amplifiers without inducing coupling between bit lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If sense amplifiers are enabled to read data from memory cells, then data can be read out, but coupling occurs between bit lines connected to the sense amplifiers which prevents proper detection of bridge defects
Solution Approach 1:
The patent divides the sense amplifier operation into distinct phases: a first sense amplifier operates independently during a first time period to detect bridge defects, while a second sense amplifier operates independently during a second time period. This temporal segmentation prevents simultaneous operation that causes coupling, thereby resolving the contradiction between detection accuracy and coupling interference.
Solution Approach 2:
The patent implements periodic operation of sense amplifiers where the first sense amplifier is enabled during a first time period, then disabled while the second sense amplifier is enabled during a second time period. This periodic alternation ensures that only one sense amplifier is active at any given time, eliminating coupling effects while maintaining the ability to read data and detect bridge defects.
2Productivity
If sense amplifiers are enabled simultaneously, then data reading can proceed, but bridge defects between memory cells connected to the same word line cannot be detected
Solution Approach 1:
The patent segments the data reading process into multiple passes, with each pass dedicated to detecting bridge defects for specific memory cells. By alternating between sense amplifiers in different time periods, the system can systematically cover all memory cells while maintaining the detection capability, thus resolving the contradiction between reading efficiency and detection precision.
Solution Approach 2:
The patent performs bridge defect detection as a preliminary action before normal data reading operations. By first enabling the first sense amplifier to detect bridge defects, then subsequently using the second sense amplifier for data reading, the system ensures that defective memory cells are identified and can be handled appropriately, improving overall system reliability.
Data Source
AI summary
A bridge defect detecting method performed in a semiconductor memory device that includes a plurality of memory cells arranged at intersections between a plurality of word lines and a plurality of bit lines and a plurality of sense amplifiers connected to the bit lines, includes the operations of: enabling a first sense amplifier and a second sense amplifier; keeping the first sense amplifier in an enabled state and disabling the second sense amplifier; enabling the second sense amplifier, and detecting a bridge defect between the first memory cell and the second memory cell by reading data from a first memory cell of a first bit line connected to the first sense amplifier and a second memory cell of a second bit line connected to the second sense amplifier.