Memory Capacity Measurement Using Defect Address Mapping
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Solution Overview
Problem
Conventional methods for addressing defects in semiconductor memory devices result in significant material and operational waste by downgrading the entire device or underutilizing available memory capacity, leading to inefficient use of functional circuitry.
Innovation Solution
An internal storage mechanism, such as a fuse array, records unusable memory addresses and an internal logic determines the actual memory capacity, allowing for precise identification and utilization of functional circuits, thereby increasing storage capacity and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional downgrading methods are used to address defects, then device reliability is improved, but manufacturing precision and storage capacity are worsened due to significant material and operational waste
Solution Approach 1:
The patent segments the memory device into usable and unusable regions by recording defective memory addresses in a separate defect storage area. This allows the functional portions to be utilized while isolating defects, resolving the contradiction by maintaining reliability through defect isolation while preserving manufacturing precision through selective usage of functional circuits.
Solution Approach 2:
The patent applies local quality by treating different memory regions differently - defective regions are marked and excluded while functional regions are preserved and utilized. The defect storage mechanism locally records only the unusable addresses, allowing the majority of functional memory to be used, thus improving manufacturing precision without compromising overall reliability.
2Reliability
If conventional downgrading methods are used to address defects, then device reliability is improved, but storage capacity is worsened due to underutilization of available memory
Solution Approach 1:
By segmenting the memory space into usable and unusable regions through defect address recording, the patent enables utilization of all functional memory circuits. This resolves the contradiction by maintaining reliability through defect isolation while maximizing storage capacity through comprehensive utilization of functional regions.
Solution Approach 2:
The patent discards only the minimal necessary defective portions by recording their addresses, while recovering and utilizing the majority of functional memory circuits. This approach maintains device reliability by excluding defective regions while maximizing storage capacity through recovery and use of functional circuits that would otherwise be wasted in conventional downgrading.
3Manufacturing precision
If internal capacity measurement is implemented, then manufacturing precision is improved through precise identification of functional circuits, but device complexity is worsened due to additional storage and logic mechanisms
Solution Approach 1:
The patent implements preliminary action by pre-recording defective memory addresses in the defect storage area during manufacturing or initialization. This allows precise identification of functional circuits to be established beforehand, enabling the memory controller to efficiently manage usable capacity without adding complex real-time measurement mechanisms, thus improving manufacturing precision while controlling device complexity.
Solution Approach 2:
The patent introduces an intermediary defect storage mechanism that bridges the gap between raw memory circuits and the memory controller. This intermediary structure stores defect information in a standardized format, allowing the controller to precisely identify functional circuits without direct complex interaction with individual memory cells, thus improving manufacturing precision while managing device complexity through abstraction.
4Productivity
If internal capacity measurement is implemented, then productivity is improved through increased yield and efficient memory utilization, but device complexity is worsened due to additional internal logic and storage mechanisms
Solution Approach 1:
By pre-recording defect information during manufacturing, the patent enables efficient memory utilization from the outset. This preliminary action allows the memory device to achieve high productivity through increased yield without requiring complex real-time measurement and adaptation mechanisms, thus balancing productivity improvement with controlled device complexity.
Solution Approach 2:
The patent implements self-service by enabling the memory device to automatically manage its own capacity through internal defect recording and capacity determination mechanisms. The memory controller autonomously calculates usable capacity based on stored defect information, eliminating the need for external complex measurement systems and achieving high productivity through self-managed efficient memory utilization while keeping device complexity manageable.
Data Source
AI summary
An apparatus including memory systems and related methods for measuring device memory capacity are disclosed herein. The apparatus may include a memory array corresponding to an actual memory capacity that is less than an initial storage capacity. The apparatus may also include a fuse array configured to store unusable memory addresses of the memory array. A logic device of the apparatus coupled to the memory array and the fuse array may be configured to access the unusable memory addresses and communicate to an external device the actual memory capacity of the memory array.


