Intermediate Circuit for Memory Card Voltage Level Conversion
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Solution Overview
Problem
The integration of memory card access in System on Chip (SoC) or chipset designs faces challenges due to the need for compatibility between low voltage signal (LVS) and high voltage signal (HVS) protocols, where conventional memory cards require high voltage operations, leading to increased chip area and cost, and potential compatibility issues with LVS protocols.
Innovation Solution
An intermediate circuit comprising a detection circuit, control circuit, conversion circuit, and selection circuit that detects memory card signals conforming to either low or high voltage specifications, generates conversion and selection control signals to convert signals as needed, ensuring compatibility without altering existing designs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If an SoC/chipset incorporates high voltage operation design for compatibility with conventional memory cards, then compatibility is improved, but chip area increases leading to higher cost and disadvantage of miniaturization
Solution Approach 1:
The patent introduces an intermediate circuit positioned between the low voltage SoC/chipset and the high voltage memory card. This intermediary circuit performs voltage level conversion, allowing the SoC to communicate with high voltage memory cards without incorporating high voltage operation circuits directly into the SoC, thus maintaining small chip area while achieving compatibility
Solution Approach 2:
The intermediate circuit creates a virtual interface that copies the high voltage signal characteristics on the low voltage side. By detecting and converting voltage levels, the intermediate circuit enables the low voltage SoC to interact with high voltage memory cards as if direct high voltage operation were available, without physically implementing high voltage circuits in the SoC
2Area of stationary object
If a low voltage signal (LVS) protocol is used for memory card access to reduce chip area and cost, then miniaturization is improved, but compatibility with conventional high voltage memory cards deteriorates
Solution Approach 1:
The intermediate circuit dynamically changes voltage level parameters based on the memory card type. When a high voltage memory card is detected, the circuit converts LVS protocol signals to HVS protocol voltage levels. This parameter transformation enables the low voltage SoC to maintain small chip area while achieving compatibility with both low and high voltage memory cards through adaptive voltage level conversion
3Adaptability or versatility
If an independent card reader chip is used for memory card access to ensure compatibility, then adaptability is improved, but device complexity increases
Solution Approach 1:
The patent merges the card reader functionality into the intermediate circuit rather than using a completely independent card reader chip. The intermediate circuit integrates voltage detection, voltage level conversion, and signal routing functions in a single unified structure, reducing overall device complexity compared to having separate independent card reader chip while maintaining full compatibility with both LVS and HVS memory cards
Data Source
AI summary
The present invention discloses an intermediate circuit including: a detection circuit generating a detection result indicating a memory card signal conforming to one of a first and a second voltage specifications which specify a higher first operation voltage and a lower second operation voltage respectively; a control circuit generating a conversion control signal and a selection control signal according to the detection result; a conversion circuit converting the memory card signal into a card-to-system conversion signal conforming to the second voltage specification according to the conversion control signal when the memory card signal conforms to the first voltage specification; and a selection circuit outputting the card-to-system conversion signal according to the selection control signal when the memory card signal conforms to the first voltage specification, and outputting the memory card signal according to the selection control signal when the memory card signal conforms to the second voltage specification.