Memory Cell Gate Layout for Stable Read-Write Voltage
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Solution Overview
Problem
The instability in writing or reading operations in semiconductor memory due to non-negligible power consumption and voltage variations caused by the length of word lines, as well as signal transmission abnormalities resulting from manufacturing defects in gate electrode lines, necessitates an optimization of the layout design of word lines.
Innovation Solution
A data storage cell design featuring a storage structure with a first and second transistor and resistor configuration, where the first and second gates are electrically connected through a conductive line, ensuring equal electric potential and reducing the resistance of the word line, thereby minimizing voltage differences and signal abnormalities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the word line length is increased to cover more memory cells, then the memory capacity is improved, but the power consumption increases and voltage stability deteriorates
Solution Approach 1:
The gate electrode line is divided into two separate gate lines (first gate line and second gate line) that are electrically isolated from each other. This segmentation allows independent voltage control for each gate, enabling selective activation and reducing overall power consumption while maintaining memory capacity.
Solution Approach 2:
The patent introduces a new dimensional approach by adding vertical stacking of gate lines above and below the bit line, rather than extending the word line horizontally. This 3D arrangement reduces the effective word line length while maintaining access to the same memory cells, thereby reducing power consumption and improving voltage stability.
2Device complexity
If multiple layers are disposed between the gate and word line, then the three-dimensional integration is improved, but the electric potential difference between gates increases causing signal transmission abnormalities
Solution Approach 1:
The gate electrode line is segmented into two independent gate lines with separate voltage control. This allows each gate to be independently optimized for its specific location and function, ensuring proper voltage levels are maintained despite the presence of multiple intervening layers, thus preventing signal transmission abnormalities.
Solution Approach 2:
The patent introduces separate voltage control mechanisms for each gate line, acting as intermediaries to regulate the electric potential. This ensures that even with multiple layers between gates, the voltage levels remain stable and signal transmission is maintained without abnormalities.
3Length of stationary object
If the gate electrode line is extended to reach more cells, then the addressable memory range is improved, but the voltage drop increases causing writing or reading instability
Solution Approach 1:
The gate electrode line is divided into two separate gate lines that can be independently controlled. This segmentation allows each gate line to be optimized for shorter effective length, reducing voltage drop and improving writing/reading stability while still providing access to the required memory range through coordinated operation.
Solution Approach 2:
The patent transitions from a single extended horizontal gate line to a 3D arrangement with gate lines positioned above and below the bit line. This dimensional change effectively reduces the voltage drop by creating multiple access paths and reducing the effective current path length, thereby improving writing and reading stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the reliability of data storage cells by reducing power consumption, stabilizing voltage, and preventing signal transmission issues, leading to improved performance in semiconductor memory operations.
Implementation Method 1
the first gate is electrically connected to the second gate through a first conductive line
Implementation Method 2
the storage structure is a variable resistor to define internal data states, and a resistance of the storage structure is changed according to an applied voltage or an applied current
Data Source
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AI summary
The invention discloses a data storage cell, comprising a storage structure, wherein a first end of the storage structure is electrically connected to a bit line; a first transistor, comprising a first gate, a first drain, and a first source; and a second transistor, comprising a second gate, a second drain, and a second source, wherein the first gate is electrically connected to the second gate, a second end of the storage structure is electrically connected to the first drain and the second drain, and the first source and the second source are electrically connected to a source line.