Non-Volatile Memory Cell Screening for Leaky Cell Detection

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Solution Overview

Problem

Existing data retention screening processes for non-volatile memory cells are inefficient and fail to detect defective cells due to electron leakage, leading to increased testing costs and undetected defects.

Innovation Solution

Implementing data retention screening methods that involve setting margin read current thresholds closer to the programmed '0' state, compacting the erase distribution, and using varying read and program operations to enhance detection efficiency, including techniques such as weak programming, multiple read operations, and adjusting control gate voltages to improve detection of leaky memory cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If traditional data retention screening processes are used, then testing costs are reduced, but detection accuracy of defective cells decreases

Engineering Contradiction:
Improvedetection accuracyVSAvoidtesting efficiency
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent applies preliminary actions by performing weak programming operations and adjusting control gate voltages before the actual retention screening measurement. This prepares the memory cells in a controlled state that enhances the detection of leaky cells, allowing for more accurate detection without requiring extensive additional testing time.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes key parameters including control gate voltage levels and read current thresholds to optimize detection sensitivity. By dynamically adjusting these parameters based on cell state and using multiple read operations with varying thresholds, the system achieves higher detection accuracy while maintaining reasonable testing efficiency.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If margin read current thresholds are set closer to programmed state, then detection accuracy improves, but time-to-failure detection increases

Engineering Contradiction:
Improvedetection accuracyVSAvoidtime-to-failure
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent employs periodic action through multiple read operations with different margin thresholds. Instead of relying on a single threshold setting, the system performs sequential reads at progressively tighter margins, allowing early detection of leaky cells while maintaining overall testing efficiency through the structured periodic approach.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The system uses feedback mechanisms where results from initial reads with relaxed margins inform subsequent reads with tighter margins. This adaptive feedback approach allows the testing system to focus resources on cells that show signs of leakage, reducing the overall time-to-failure detection while maintaining high accuracy.

Inventive Principle:
Principle #23Feedback

3Measurement precision

If multiple read operations with varying thresholds are performed, then detection accuracy improves, but device complexity increases

Engineering Contradiction:
Improvedetection accuracyVSAvoidtesting process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the retention screening process into distinct phases: initial reads with relaxed margins, intermediate reads with moderate margins, and final reads with tight margins. This segmented approach breaks down the complex multi-threshold testing into manageable stages, making the process more controllable and easier to implement despite the multiple operations required.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentEP4508640B1Method of screening non-volatile memory cells
Publication Date: 2026.02.25 SILICON STORAGE TECHNOLOGY INC
  • EP4508640B1 patent drawingFigure 1
  • EP4508640B1 patent drawingFigure 2
  • EP4508640B1 patent drawingFigure 3

AI summary

A method for screening memory cells includes erasing the memory cells, weakly programming the memory cells to a modified erased state, performing a first read operation on the memory cells after the erasing and the weakly programming, screening any of the memory cells that exhibit a read current during the first read operation below a margin read current threshold M1, baking the memory cells after the first read operation, performing a second read operation on the memory cells after the baking, and screening any of the memory cells that exhibit a read current during the second read operation below the margin read current threshold M1.