Memory-Cell PUF Code Generation Using Manufacturing Variations
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Solution Overview
Problem
Existing semiconductor chip technologies lack a secure and efficient method to generate unique identity codes that prevent data theft and duplication, particularly in high-security applications.
Innovation Solution
A physically unclonable function (PUF) code generating method utilizing a non-volatile memory cell array with controlled storage states, where electrical characteristics are compared to generate unique PUF codes through selecting and comparing memory cell currents or combinations, forming a multi-bit PUF code.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional random number generation methods are used, then data security can be provided, but the method lacks efficiency and security in high-security applications
Solution Approach 1:
The system uses the semiconductor chip's own manufacturing variations to generate the PUF code, making the chip self-identify itself without requiring external security credentials or complex key management infrastructure
Solution Approach 2:
The invention changes the physical parameters of the memory cells (threshold voltage, leakage current) through manufacturing variations to create unique electrical characteristics that form the basis of the PUF code generation
2Reliability
If manufacturing variations are utilized for PUF code generation, then unique identity codes can be obtained, but the codes may be duplicated or cloned
Solution Approach 1:
The PUF code is segmented into multiple bits, each generated from comparisons of different pairs of memory cells or different electrical characteristics, making the complete code increasingly difficult to clone
Solution Approach 2:
The PUF code combines multiple electrical characteristics (threshold voltage, leakage current, switching characteristics) from multiple memory cells to create a composite unique identifier that is resistant to cloning
3Reliability
If multiple memory cells are selected and compared, then more secure PUF codes can be generated, but the complexity of the generation process increases
Solution Approach 1:
The system merges the electrical characteristics of multiple memory cells through parallel comparisons, generating multiple PUF code bits simultaneously rather than sequentially, which maintains security while reducing processing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces a unique and secure PUF code that is resistant to duplication, enhancing security in semiconductor chips by leveraging manufacturing variations for random code generation.
Implementation Method 1
the PUF technology acquires the unique PUF code of the semiconductor chip according to the manufacturing variation of the semiconductor chip
Data Source
AI summary
A physically unclonable function (PUF) code generating method includes the following steps. In a step (a), M×N memory cells in a memory cell array of a non-volatile memory are controlled to have an identical storage state, wherein M and N are positive integers, and M×N is greater than 1. In a step (b), X memory cells are selected from the memory cell array multiple times, and a virtual array is established, wherein the virtual array contains plural electrical characteristic combinations, and X is a positive integer smaller than M×N. In a step (c), the plural electrical characteristic combinations are selected from the virtual array multiple times, and a multi-bit PUF code is generated.