3D Memory Cell Separation Layout for Capacity and Reliability
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing data storage capacity and reliability, particularly in three-dimensionally arranged memory cells, where existing designs struggle to optimize the arrangement of gate electrodes and interlayer insulating layers for efficient data storage and separation.
Innovation Solution
The semiconductor device incorporates a substrate with distinct regions featuring stacked gate electrodes and interlayer insulating layers, including main and auxiliary separation regions, channel structures, and dummy structures, arranged in a staircase shape to enhance data storage capacity and reliability by optimizing the spacing and pitch of these elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If gate electrodes and interlayer insulating layers are stacked in three-dimensional arrangement to increase data storage capacity, then storage capacity is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The semiconductor device is divided into multiple regions (first region, second region, third region) with different pitch configurations. Auxiliary separation regions are segmented into first auxiliary separation regions and second auxiliary separation regions with different pitches, allowing localized optimization of storage capacity while managing complexity through regional differentiation.
Solution Approach 2:
The patent transitions from two-dimensional planar arrangements to three-dimensional vertical stacking of gate electrodes and interlayer insulating layers. Multiple stacks are arranged vertically with channel structures penetrating through them, creating a multi-layered three-dimensional architecture that significantly increases storage capacity per unit area.
2Quantity of substance
If auxiliary separation regions are arranged with different pitches in different regions, then data storage capacity is optimized, but manufacturing precision requirements increase
Solution Approach 1:
Different regions of the semiconductor device are assigned different pitch values for auxiliary separation regions. The first auxiliary separation regions have a first pitch while the second auxiliary separation regions have a second pitch different from the first. This local quality differentiation allows optimization of storage capacity in specific regions without requiring uniform high-precision manufacturing across the entire device.
Data Source
AI summary
A semiconductor memory device includes a substrate having a first region, a second region, and a third region main separation regions extending in the first direction and apart from each other in a second direction, first auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction, and second auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction. The first auxiliary separation regions are at a first pitch in the second direction between the main separation regions, the second auxiliary separation regions are disposed at a second pitch, smaller than the first pitch in the second direction between the main separation regions, and the first auxiliary separation regions and the second auxiliary separation regions are shifted from each other in the second direction.