Semiconductor Memory Channel Boosting for Retention Acceleration
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Solution Overview
Problem
Semiconductor memory devices face retention deterioration and altered threshold voltage distributions during program operations, leading to reduced memory cell performance.
Innovation Solution
A semiconductor memory device with a memory cell array and peripheral circuit that performs retention acceleration by boosting the channel of cell strings during program operations, improving threshold voltage distribution through controlled voltage application and retention acceleration operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a program operation is performed on memory cells, then data can be programmed into the memory cells, but retention deterioration occurs and threshold voltage distribution changes
Solution Approach 1:
The patent applies preliminary action by performing a retention acceleration operation before the program verify operation. Specifically, the channel of the cell string is boosted by applying a first voltage to the source line and a second voltage to the drain line, which prepares the channel for better retention characteristics during the subsequent programming and verification process. This preliminary channel boosting prevents threshold voltage distribution changes and improves retention before the final program state is established.
2Reliability
If channel boosting is performed during program operation, then retention characteristics improve, but additional voltage application steps are required
Solution Approach 1:
The patent merges the retention acceleration operation with the existing program operation structure. The channel boosting is integrated into the program sequence by combining the voltage application for channel boosting with the existing program voltage applying operation and program verify operation. This merging approach allows retention acceleration to be achieved without adding separate, independent operations, thereby improving reliability while minimizing increases in operational complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances retention characteristics and stabilizes threshold voltage distribution, improving memory cell performance by addressing retention deterioration and maintaining program states effectively.
Implementation Method 1
performing a retention acceleration operation by boosting a channel of the cell string when a program state among the plurality of program states is determined as a program pass
Data Source
AI summary
The present technology relates to a semiconductor memory device and a method of operating the same. The semiconductor memory device includes a memory cell array including a plurality of memory blocks, a peripheral circuit configured to perform a program operation on a selected memory block among the plurality of memory blocks, and control logic configured to control the peripheral circuits to perform a retention acceleration operation including boosting a channel of a plurality of cell strings included in the selected memory block between a program voltage applying operation and a program verify operation during the program operation.