Nonvolatile Memory Channel Voltage Boosting for Data Stabilization
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Solution Overview
Problem
Conventional nonvolatile memory devices require a long time for threshold voltage to become uniform after data recording, leading to reliability issues in data verification and increased likelihood of incorrect programming completion determinations.
Innovation Solution
The method involves inducing a boosting voltage on the channel of a selected memory cell by applying a pass voltage to adjacent wordlines or bit lines, which stabilizes the recorded data and saturates the threshold voltage more rapidly, improving data verification reliability and programming speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional programming operation is used, then data is recorded in memory cell, but threshold voltage varies over time requiring long stabilization period
Solution Approach 1:
The patent applies preliminary action by inducing a boosting voltage on the channel of the selected memory cell immediately after data programming. This boosting voltage is applied before verification to pre-stabilize the threshold voltage, preventing the time-dependent variation that occurs in conventional operations. The boosting voltage compensates for threshold voltage shifts before they affect verification accuracy.
Solution Approach 2:
The patent changes the electrical parameter of the channel by inducing a boosting voltage (different from the programming voltage) to alter the threshold voltage characteristics. This parameter change stabilizes the threshold voltage at a desired level, reducing variation over time and enabling faster verification without sacrificing reliability.
2Reliability
If threshold voltage stabilization time is extended, then data verification reliability improves, but programming operation speed decreases
Solution Approach 1:
The boosting voltage is applied as a preliminary stabilization step immediately following programming, eliminating the need for extended waiting periods. This preliminary action achieves threshold voltage saturation faster, allowing verification to proceed sooner without compromising programming reliability.
Solution Approach 2:
The patent maintains continuous useful action by seamlessly transitioning from programming to boosting voltage application, and then to verification. This continuous process eliminates idle waiting time while ensuring the threshold voltage is properly stabilized at each stage, maintaining reliability throughout the operation sequence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach rapidly stabilizes the threshold voltage, enhancing the reliability of data verification and programming operations, making the method suitable for high-speed nonvolatile memory devices by reducing the time required for data stabilization to several microseconds.
Implementation Method 1
The boosting voltage may be capacitively induced from the pass voltage
Data Source
AI summary
Methods of operating nonvolatile memory devices are provided. In a method of operating a nonvolatile memory device including a plurality of memory cells, recorded data is stabilized by inducing a boosting voltage on a channel of a memory cell in which the recorded data is recorded. The memory cell is selected from a plurality of memory cells and the boosting voltage on the channel of the selected memory cell is induced by a channel voltage of at least one memory cell connected to the selected memory cell.