Memory Charge Pump Circuit With Selectable Connection Units
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Solution Overview
Problem
Conventional semiconductor memory apparatuses face inefficiencies in pumping voltage generation due to variations in transistor sizes caused by process variations, leading to decreased pumping voltage generation efficiency and increased power consumption.
Innovation Solution
A circuit and method for generating a pumping voltage in semiconductor memory apparatuses that includes a voltage application section, charge pumps, and connection units, where the connection units are selectively interconnected based on test signals to optimize voltage transmission, allowing for the selection of the most efficient connection units and fixing them post-test to ensure efficient pumping voltage generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fixed interconnection is used for voltage transmission, then device complexity is reduced, but pumping voltage generation efficiency decreases due to transistor size variations
Solution Approach 1:
The patent implements dynamic selection of connection units based on actual transistor size variations. Multiple connection units with different characteristics are provided, and the optimal one is selected according to measured transistor sizes, allowing the circuit to adapt to process variations rather than using a fixed interconnection structure.
Solution Approach 2:
The patent changes the interconnection parameters (connection unit selection) based on transistor size parameters. By measuring transistor sizes and selecting connection units that compensate for size variations, the system optimizes voltage transmission efficiency to maintain pumping voltage generation efficiency despite manufacturing variations.
2Manufacturing precision
If multiple connection units are provided for optimization, then pumping voltage generation efficiency is improved, but device complexity and power consumption increase
Solution Approach 1:
The patent performs preliminary measurement of transistor sizes and selects the optimal connection unit before normal operation. This one-time selection process allows the circuit to operate efficiently throughout its lifetime without continuous power consumption for optimization, as the best connection unit is determined in advance based on manufacturing variations.
Solution Approach 2:
The circuit automatically selects the optimal connection unit based on measured transistor sizes without requiring external intervention or continuous control. The selection mechanism is self-contained, using the transistor size information to autonomously configure the optimal interconnection for voltage transmission.
3Manufacturing precision
If transistor sizes are fixed during manufacturing, then device complexity is reduced, but pumping voltage generation efficiency decreases due to process variations
Solution Approach 1:
The patent measures transistor sizes during or after manufacturing and selects the appropriate connection unit before the device is put into service. This preliminary characterization allows standard manufacturing processes to be used while still achieving optimized performance, as the selection is based on actual measured parameters rather than requiring precise control during manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maximizes pumping voltage generation efficiency and reduces power consumption by allowing for the selection of optimal connection units, even in the presence of process variations, thereby maintaining designed efficiency and reducing power consumption.
Implementation Method 1
the first capacitor C1 generates a first boot voltage V_boot1 in response to an oscillator signal 'osc'
Implementation Method 2
the second capacitor C2 generates a second boot voltage V_boot2 in response to an inverted oscillator signal 'oscb'
Implementation Method 3
the first transistor N1 outputs an external voltage VDD to a first node (nodeA) when a first transmission signal 'trans1' is enabled
Data Source
AI summary
A circuit for generating a pumping voltage in a semiconductor memory apparatus includes a control signal generation block configured to generate a first control signal obtained by level-shifting a voltage level of a test signal to a first driving voltage level, a voltage application section configured to supply an external voltage to a first node in response to a first transmission signal, a first charge pump configured to raise a voltage level of the first node by a first predetermined level in response to an oscillator signal, and a first pumping voltage output section configured to select at least one of a first connection unit and a second connection unit in response to the first control signal, and to interconnect the first node with a second node using the selected connection unit when a second transmission signal is enabled, wherein a first pumping voltage is output through the second node.