Memory Chip Temperature Compensation via Cell Current Measurement
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor memory devices face challenges in maintaining data integrity and read operation reliability due to temperature-induced threshold voltage variations, which existing technologies fail to accurately predict and compensate for.
Innovation Solution
A memory system that measures cell current in semiconductor memory chips, generates temperature compensation data, and adjusts read voltage accordingly to predict and mitigate threshold voltage variations, thereby enhancing read operation reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If temperature compensation is not implemented, then device complexity is low, but read operation reliability deteriorates due to threshold voltage variations
Solution Approach 1:
The patent applies preliminary action by measuring cell current and generating temperature compensation data before actual read operations. The compensation data is stored in advance in the memory chip, allowing the system to predict and compensate for threshold voltage variations before they affect read reliability, rather than reacting after the problem occurs
Solution Approach 2:
The memory chip performs self-measurement of cell current and self-generation of temperature compensation data through its internal control logic. This self-service approach eliminates the need for external temperature sensors or complex external compensation circuits, improving read reliability while minimizing additional device complexity
2Measurement precision
If cell current measurement and temperature compensation data generation are implemented for each memory chip, then threshold voltage prediction accuracy is improved, but measurement precision requirements increase
Solution Approach 1:
The patent uses cell current as an intermediary parameter to indirectly measure threshold voltage variations. Instead of directly measuring threshold voltage which would require complex measurement circuits, the system measures cell current under specific conditions, which correlates with threshold voltage changes due to temperature. This intermediary approach achieves accurate threshold voltage prediction while avoiding the need for complex direct measurement mechanisms
3Reliability
If temperature compensation data is stored in each memory chip, then read operation reliability under varying temperatures is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements local quality by generating and storing individual temperature compensation data for each memory chip based on its specific cell current characteristics. Rather than using a generic compensation value for all chips, each chip has its own tailored compensation data stored in its own memory, allowing precise temperature compensation that accounts for manufacturing variations between individual chips
Data Source
AI summary
Disclosed are a semiconductor memory device, a memory system including the same, and an operating method thereof. The memory system includes: a semiconductor memory device including a plurality of memory chips; and a controller configured to measure a cell current of each of the plurality of memory chips, generate temperature compensation data corresponding to the measured cell current, and store the generated temperature compensation data in each of the plurality of memory chips.