Semiconductor Memory Column Enable Signal Timing Stabilization
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Solution Overview
Problem
Conventional semiconductor memory devices experience data read errors due to varying latency, process, voltage, and temperature variations, which affect the timing of the column enable signal generation, leading to inconsistent data amplification and reliability issues.
Innovation Solution
The proposed solution involves a semiconductor memory device with a column enable signal generator that generates a latency control signal delayed by a clock cycle corresponding to the latency signal and deactivated after maintaining activation for a burst length signal cycle, along with a row enable signal generator that activates and deactivates at specific time periods, and a final column enable signal generator that stabilizes the column enable signal timing using a delay unit, signal generators, and a logical-sum circuit to ensure consistent data read regardless of latency variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the column enable signal is delayed by a clock cycle corresponding to the latency signal, then the latency control is achieved, but the activation time of the column enable signal varies with latency changes while the row enable signal activation time remains constant
Solution Approach 1:
A final column enable signal generator is introduced as an intermediary component that receives both the row enable signal and the column enable signal. This mediator synchronizes the timing by generating a final column enable signal that is activated after a constant time period from the row enable signal activation, regardless of latency variations. The intermediary ensures timing consistency by using the row enable signal as a reference point rather than relying on the variable latency-based delay.
2Adaptability or versatility
If the latency control signal is activated after being delayed for a clock cycle corresponding to the latency signal, then the latency-dependent operation is achieved, but data read errors occur due to process, voltage, and temperature variations affecting the timing
Solution Approach 1:
The final column enable signal generator is activated in advance based on the row enable signal timing, establishing a constant time reference before the actual data read operation. By predeterminedly setting the activation time of the final column enable signal based on the row enable signal rather than the variable latency signal, the system prepares the correct timing configuration before process, voltage, or temperature variations can cause errors.
Solution Approach 2:
The final column enable signal generator uses the row enable signal as a feedback reference to adjust and stabilize the column enable timing. By continuously referencing the row enable signal activation time and maintaining a constant time period relationship, the system creates a feedback mechanism that compensates for variations in latency, process, voltage, and temperature, ensuring reliable data read operations.
Data Source
AI summary
A semiconductor memory device includes a column enable signal generator, a row enable signal generator and a final column enable signal generator. The column signal enable generator may generate a latency control signal and generating a buffered clock signal as a column enable signal in response to the latency control signal. The row enable signal generator may generate a row enable signal. The final column enable signal generator may generate a first signal in response to the column enable signal, a second signal in response to the row enable signal, and may output the first and/or the second signal as a final column enable signal.