Memory Conductor Barrier Structure Against Moisture Ingress

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Solution Overview

Problem

Semiconductor memory devices face issues with reliability deterioration due to damage and water ingress, which can compromise their performance and longevity.

Innovation Solution

The semiconductor memory device incorporates a conductor structure with a first conductor portion and a covering layer, featuring a first core and a barrier metal film to enhance protection against damage and moisture ingress, while also ensuring electrical connectivity and uniform application of source voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conductor structure with barrier metal film and covering layer is implemented, then protection against damage and water ingress is improved, but device complexity increases

Engineering Contradiction:

Improveprotection against damage and water ingressVSAvoidconductor structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The conductor structure implements nested protection by placing the barrier metal film inside the conductor and the covering layer outside, creating concentric protective barriers. The first barrier metal film is positioned within the first conductor portion, and the first covering layer is positioned outside the first conductor portion, forming a nested configuration that provides multiple levels of protection against damage and water ingress.

Inventive Principle:

Principle #7Nested doll (Nesting)

Solution Approach 2:

The conductor structure uses composite materials by combining different functional layers: a conductive material for electrical conductivity, a barrier metal film for protection against water ingress and damage, and a covering layer for additional protection. This composite structure integrates multiple material properties to simultaneously achieve electrical functionality and environmental protection.

Inventive Principle:

Principle #40Composite materials

2Reliability

If multiple protective layers are added to prevent water ingress, then reliability is improved, but manufacturing complexity increases

Engineering Contradiction:

Improveprevention of water ingressVSAvoidmanufacturing process complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The protective structure is segmented into distinct functional layers: the barrier metal film segment that provides water ingress prevention, and the covering layer segment that provides additional protection. This segmentation allows each layer to be optimized for its specific function and manufactured using appropriate processes, rather than attempting to create a single complex protective layer.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The barrier metal film is formed within the conductor structure before final assembly, preparing the protective barrier in advance. The covering layer is then added subsequently, creating a pre-assembled protective configuration that simplifies final device assembly and reduces manufacturing complexity at later stages.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively prevents damage and water entry, enhancing the reliability and durability of the semiconductor memory device by maintaining electrical integrity and uniform voltage distribution.

Implementation Method 1

a first barrier metal film that covers a side surface of the first core and the second end of the first conductor portion

Methodology Applied

Scientific EffectPhysical barrier protection:

Implementation Method 2

a covering layer in contact with the conductor in the first direction

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20260057938A1Semiconductor memory device and method for manufacturing semiconductor memory device

Publication Date: 2026.02.26 KIOXIA CORP

AI summary

A semiconductor memory device includes a substrate including a first region and a second region surrounding the first region when viewed from above the substrate, an insulating layer on the substrate, a memory cell array above the first region, a conductor above the second region, that extends through the insulating layer in a first direction perpendicular to the substrate, and a covering layer contacting the conductor in the first direction. The conductor includes a first conductor portion, a first end of which is in contact with the covering layer, and a second conductor portion in contact with a second end of the first conductor portion that is opposite to the first end in the first direction. The first conductor portion includes a first core and a first barrier metal film that covers a side surface of the first core and the second end of the first conductor portion.