3D Memory Contact Plug Structure for Interlayer Capacitance
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Solution Overview
Problem
Existing three-dimensional flash memory technologies face challenges in efficiently utilizing the space between conductive layers for additional functionality, such as capacitive elements, leading to inefficiencies in circuit design and increased manufacturing costs.
Innovation Solution
The integration of contact plugs that electrically insulate and connect conductive layers, allowing for the formation of interlayer capacitances that function as capacitive elements, utilizing the space between conductive layers for enhanced functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If unused conductive layers are utilized for capacitive elements, then storage capacity is improved, but dielectric breakdown risk increases
Solution Approach 1:
An insulation layer is introduced as an intermediary between the first conductive layer and the second conductor layer. This insulation layer prevents direct electrical contact that would cause dielectric breakdown, while still allowing the formation of capacitive elements using the unused conductive layers. The mediator enables safe utilization of previously unused resources.
Solution Approach 2:
The contact plug is segmented into multiple functional parts: a second conductor layer for electrical connection, and an insulation layer for electrical isolation. This segmentation allows the same structural element to simultaneously provide both connectivity and isolation functions, enabling safe capacitive element formation.
2Reliability
If contact plugs are designed to electrically insulate conductive layers, then reliability is improved, but device complexity increases
Solution Approach 1:
The contact plug structure is designed to perform multiple functions: the second conductor layer provides electrical connection to the second conductive layer, while the insulation layer simultaneously provides electrical isolation between conductive layers. This multi-functionality reduces the need for separate isolation structures, managing complexity.
Solution Approach 2:
The insulation function is merged into the contact plug structure itself rather than being a separate component. The insulation layer is integrated within the contact plug, combining connection and isolation functions in a single structural element, thereby managing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the use of unused space between conductive layers for capacitive elements, improving circuit performance and reducing manufacturing costs by optimizing the utilization of available space within the semiconductor storage device.
Implementation Method 1
an insulation layer that is provided between the second conductor layer and the first conductive layer and is configured to insulate the second conductor layer and the first conductive layer
Implementation Method 2
forming interlayer capacitances to function as capacitive elements
Data Source
AI summary
A semiconductor storage device of an embodiment includes a plurality of conductive layers and a plurality of insulation layers, a first contact plug, and a second contact plug. The plurality of conductive layers and the plurality of insulation layers are alternately stacked in a first direction. The first contact plug contacts a first conductive layer included in the plurality of conductive layers and extends in the first direction. The second contact plug contacts a second conductive layer that is a conductive layer directly above the first conductive layer of the plurality of conductive layers and extends in the first direction through the first conductive layer. The second contact plug includes a second conductor layer, and an insulation layer that is provided between the second conductor layer and the first conductive layer and is configured to insulate the second conductor layer and the first conductive layer.