3D Memory Select Line Contact Separation in Stacked Layers
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Solution Overview
Problem
Existing memory devices with 3D structures face challenges in process complexity and defects due to the integration of select line contacts, which are not effectively separated, leading to inefficiencies in manufacturing.
Innovation Solution
A memory device with a stacked structure featuring alternating conductive and insulating layers, including separation patterns that penetrate conductive layers to separate select line contacts, simplifying the manufacturing process and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If select line contacts are integrated without separation patterns, then device complexity is reduced, but manufacturing precision deteriorates due to difficulty in separating contacts
Solution Approach 1:
The patent introduces separation patterns that divide the contact area into distinct regions, enabling clear separation between select line contacts. These patterns create physical boundaries that prevent overlap and ensure precise positioning of adjacent contacts, directly resolving the manufacturing precision issue while adding controlled structural complexity.
2Manufacturing precision
If separation patterns are added to separate select line contacts, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The separation patterns extend vertically through multiple stacked layers, utilizing the third dimension to achieve separation. By implementing patterns that penetrate through conductive layers and interlayer insulating layers in the vertical direction, the patent achieves effective contact separation without increasing horizontal complexity, thus managing device complexity while improving manufacturing precision.
3Productivity
If trenches penetrate through pre-select line contacts, then productivity improves by simplifying contact formation, but reliability deteriorates due to potential contact damage
Solution Approach 1:
The patent forms pre-select line contacts before creating the separation trenches, establishing the contacts in advance when the structure is more accessible and easier to form. This preliminary action allows for better control and reduced risk of damage during subsequent trench formation, thereby maintaining reliability while achieving productivity benefits from the simplified contact formation process.
Data Source
AI summary
Provided herein is a memory device and a method of manufacturing the memory device. The memory device includes a stacked structure including a plurality of conductive layers and a plurality of interlayer insulating layers that are alternately stacked in a cell array area and a contact area, a plurality of cell plugs formed within the stacked structure in the cell array area, a plurality of select line contacts coupled to the conductive layer that is allocated as a select line among the plurality of conductive layers, and a separation pattern penetrating the conductive layer that is allocated as the drain select line in the cell array area, the separation pattern extending from the cell array area to the contact area. The separation pattern separates the plurality of select line contacts from each other.