Memory Control Circuit Temperature-Adaptive Write Voltage Adjustment
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Solution Overview
Problem
Rewritable non-volatile memory devices, such as flash memory, experience increased error bits due to frequent electron injection and removal during writing and erasing operations, especially at high temperatures, leading to inaccurate data storage and retention issues.
Innovation Solution
A data writing method that detects the operating temperature of a memory storage apparatus and adjusts operation parameters for the rewritable non-volatile memory module, such as initial write voltage, write voltage pulse time, and compensation values, to optimize data writing and reduce error bits, using a memory control circuit unit with a thermal sensor to determine and adjust these parameters based on the wear degree of the memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If frequent electron injection and removal operations are performed during writing and erasing, then data rewriting capability is improved, but error bit occurrence increases due to wear and threshold voltage distribution widening
Solution Approach 1:
The patent applies dynamics by making the write voltage adjustable based on operating conditions. Specifically, the write voltage is dynamically changed according to the operating temperature and the wear degree of the memory cell, allowing the system to adapt to varying conditions and reduce error bits while maintaining rewriting capability
Solution Approach 2:
The patent changes physical parameters (write voltage magnitude) based on the state of the memory cell. The write voltage is adjusted according to temperature and wear degree parameters, transforming a static write operation into a dynamic one that responds to cell conditions, thereby reducing error occurrence
2Ease of operation
If high temperature operation occurs, then device functionality is maintained, but data retention decreases and error bit occurrence increases
Solution Approach 1:
The patent changes the write voltage parameter in response to temperature variations. When the operating temperature exceeds a predetermined threshold, the controller adjusts the write voltage based on the wear degree, thereby maintaining data retention and reducing error bits during high-temperature operation
3Ease of manufacture
If fixed write voltage is used for programming, then manufacturing simplicity is maintained, but manufacturing precision of threshold voltage decreases due to process variations
Solution Approach 1:
The patent implements feedback by measuring the actual threshold voltage of the memory cell and using this information to adjust the write voltage. The controller determines the wear degree based on threshold voltage measurements and compensates for process variations by adapting the write voltage, thereby improving threshold voltage precision without complicating the manufacturing process
Data Source
AI summary
A data writing method for writing data into a memory cell of a rewritable non-volatile memory module, and a memory control circuit unit and a memory storage apparatus using the same area provided. The method includes recording a wear degree of the memory cell and detecting an operating temperature of the memory storage apparatus. The method further includes adjusting at least one predetermined operation parameter corresponding to the rewritable non-volatile memory module to generate at least one adjusted operation parameter corresponding to the rewritable non-volatile memory module and writing the data into the memory cell based on the at least one adjusted operation parameter if the operating temperature of the memory storage apparatus is larger than a predetermined temperature. Accordingly, the method can accurately store data into the rewritable non-volatile memory module, thereby lowing the operating temperature of the memory storage apparatus.