Memory Controller Programming Time Adjustment
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Solution Overview
Problem
The existing memory systems face challenges in maintaining a consistent writing speed across different word lines, leading to variations that do not meet customer-specified reference values, which affects the overall performance and quality of service.
Innovation Solution
A memory system that includes a memory controller which calculates and adjusts the programming time for each word line based on a target programming time, ensuring that the variation width of the writing speed satisfies a predetermined reference value by delaying or adjusting the programming time as necessary.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the memory system uses vertically stacked memory cells to increase capacity, then the storage capacity is improved, but the programming time variation across word lines increases
Solution Approach 1:
The memory controller performs preliminary actions by confirming the programming time for each word line before actual programming operations, calculates a target programming time based on these confirmations, and transmits this target time to the memory device in advance. This allows the memory device to adjust its programming time for each word line proactively, ensuring consistent writing speed variation before the actual programming begins.
Solution Approach 2:
The system implements feedback by having the memory controller confirm the programming time for each word line, calculate an appropriate target programming time based on this confirmation, and then use this target time to control subsequent programming operations. The controller continuously monitors and adjusts programming parameters based on the confirmed programming times, creating a closed-loop control system that maintains writing speed consistency.
2Reliability
If the memory controller adjusts programming time for each word line to reduce writing speed variation, then the quality of service is improved, but the control complexity increases
Solution Approach 1:
The memory controller performs multiple functions using a unified approach: it confirms programming time, calculates target programming time, transmits control parameters, and monitors writing speed variation all through a single integrated control mechanism. This multi-functional control system manages different aspects of programming time adjustment without requiring separate complex control circuits for each function.
Solution Approach 2:
The system changes programming time parameters dynamically based on confirmed measurements. The memory controller adjusts the programming time for each word line by modifying the target programming time parameter, which is then transmitted to the memory device. This parameter-based control approach simplifies the control architecture compared to hardware-level modifications.
3Manufacturing precision
If the memory system monitors writing speed variation to set final target programming time, then the programming precision is improved, but the measurement and control time increases
Solution Approach 1:
The system performs partial monitoring by checking writing speed variation for only a predetermined time period rather than continuously monitoring the entire programming process. This allows the memory controller to confirm whether the variation width satisfies the reference value without incurring excessive measurement time, achieving adequate precision control with reasonable time investment.
Solution Approach 2:
The system replaces complex continuous monitoring mechanisms with a simplified time-based verification approach. Instead of continuously measuring writing speed throughout the entire programming process, the controller monitors for a predetermined time and makes decisions based on whether the variation width satisfies the reference value during this period, reducing measurement overhead.
Data Source
AI summary
A memory system includes: nonvolatile memory devices and a memory controller confirming a programming time for each word line of each of the nonvolatile memory devices and calculating a target programming time on the basis of the programming time for each word line. Each of the nonvolatile memory devices receives the target programming time from the memory controller, and adjusts the programming time for each word line on the basis of the target programming time. When the adjustment of the programming time for each word line is completed, the memory controller confirms a variation width of a writing speed of the memory system for a predetermined time, and sets the target programming time as a final target programming time when the variation width of the writing speed is smaller than a reference value.