Memory Controller Read Voltage Offset Determination

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Solution Overview

Problem

Existing memory sub-systems face performance penalties in latency due to data bus congestion caused by sending specific read voltage values for each read command in memory devices.

Innovation Solution

A memory device is equipped with a controller that maintains an oscillator-driven accumulator to determine read voltage offset values, which are used to modify base read voltage values, thereby reducing the need for precise voltage settings in read operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If specific read voltage values are sent for each read command, then read accuracy is improved, but data bus congestion increases and latency increases

Engineering Contradiction:
Improveread accuracyVSAvoidlatency
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The controller pre-calculates and stores read voltage offset values in a lookup table based on program reference values before read operations are needed. When a read command arrives, the controller simply retrieves the pre-computed offset value corresponding to the block's program reference value, avoiding real-time voltage calculation and reducing latency.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces a lookup table as an intermediary data structure that stores pre-computed read voltage offset values. This lookup table acts as a mediator between the program reference values and the required read voltage values, enabling fast retrieval without direct computation during read operations.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If specific read voltage values are sent for each read command, then read accuracy is improved, but data bus congestion increases

Engineering Contradiction:
Improveread accuracyVSAvoiddata bus congestion
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The controller pre-calculates and stores read voltage offset values in a lookup table based on program reference values before read operations are needed. When a read command arrives, the controller simply retrieves the pre-computed offset value corresponding to the block's program reference value, avoiding real-time voltage calculation and reducing latency.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces a lookup table as an intermediary data structure that stores pre-computed read voltage offset values. This lookup table acts as a mediator between the program reference values and the required read voltage values, enabling fast retrieval without direct computation during read operations.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If precise voltage settings are used in read operations, then data integrity is improved, but power consumption increases

Engineering Contradiction:
Improvedata integrityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The controller pre-calculates and stores read voltage offset values in a lookup table based on program reference values before read operations are needed. When a read command arrives, the controller simply retrieves the pre-computed offset value corresponding to the block's program reference value, avoiding real-time voltage calculation and reducing latency.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS12322473B2Determining read voltage offset in memory devices
Publication Date: 2025.06.03 MICRON TECHNOLOGY INC
  • US12322473B2 patent drawing
  • US12322473B2 patent drawing
  • US12322473B2 patent drawing

AI summary

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including initializing the memory device; selecting at least one sample management unit on the memory device; performing a calibration operation on the sample management unit to determine a duration value reflecting a duration during which the memory device was powered down; adjusting an accumulator value based on the duration value; determining a read voltage value based on the accumulator value; and performing a read operation using the read voltage value.