Memory Controller Thermal Throttling via Dynamic Status Read Check Period
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Solution Overview
Problem
The performance of memory dies in a memory system degrades due to increased temperature, leading to higher error rates, which existing technologies fail to effectively address by adjusting the temperature of individual memory dies.
Innovation Solution
A memory system with a memory controller that communicates with memory devices and uses a timer to transmit status read commands based on a status read check period determined by threshold voltage distribution offset for each memory die, allowing for thermal throttling mode management and temperature adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the memory system operates at high performance, then productivity is improved, but temperature increases causing error rates to rise
Solution Approach 1:
The patent implements dynamic adjustment of the status read check period based on real-time temperature monitoring and threshold voltage distribution offset. When temperature increases cause threshold voltage shifts beyond acceptable ranges, the system dynamically lengthens the status read check period to reduce operational load on affected memory dies, thereby maintaining reliability while allowing high performance during normal operating conditions
Solution Approach 2:
The system changes operational parameters by adjusting the status read check period in response to temperature-induced threshold voltage distribution changes. By monitoring threshold voltage offset and dynamically modifying the check period parameter, the system adapts to thermal conditions to prevent error rates from increasing during high-performance operation
2Temperature
If thermal throttling is applied to reduce temperature, then temperature is reduced, but performance degradation occurs
Solution Approach 1:
Instead of applying uniform thermal throttling to all memory dies, the patent identifies specific target memory dies experiencing excessive temperature rise through threshold voltage distribution offset monitoring. The status read check period is selectively adjusted only for affected dies, allowing other memory dies to continue operating at full performance while the targeted dies receive localized thermal management
Solution Approach 2:
The system applies partial thermal management by selectively adjusting the status read check period for only those memory dies exhibiting threshold voltage shifts beyond predefined thresholds. This partial action approach prevents unnecessary performance degradation in memory dies that are not experiencing thermal issues, maintaining overall system productivity while managing temperature where needed
3Temperature
If status read check period is increased to reduce temperature, then temperature is reduced, but time for operations increases
Solution Approach 1:
The patent implements periodic status read commands with dynamically adjusted intervals. By setting the status read check period to specific values (e.g., 1ms, 2ms, 4ms, 8ms, 16ms, 32ms, 64ms, or 128ms) based on threshold voltage distribution offset, the system creates periodic cooling intervals that effectively reduce temperature while minimizing the time penalty compared to continuous operation
Data Source
AI summary
A memory system and a method of operating the memory system are provided. The memory system may determine, on a determination that the memory system enters thermal throttling mode, a target status read check period based on threshold voltage distribution offset for the target memory die, and set a timer to transmit a status read command for the target memory die to the memory device based on the target status read check period.