Memory Controller Voltage-Switched ECC for Low-Voltage Reliability
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Solution Overview
Problem
The decreasing size of semiconductor devices in memory devices limits the operation voltage range, leading to potential errors during low-voltage operations, such as in standby or power-saving modes, necessitating a controller with a mode selection unit capable of performing repair operations.
Innovation Solution
A controller with a mode selection unit that switches between normal and repair modes based on operation voltage, utilizing error correction codes (ECC) and row redundancy areas to correct errors, ensuring reliable data access and storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the memory device operates at lower voltage to reduce power consumption, then power efficiency is improved, but error rate in output data increases
Solution Approach 1:
The patent applies preliminary action by performing ECC encoding on input data before writing to memory, and preparing correction data in advance. The controller encodes input data to generate both storage data and correction data before the actual memory write operation, enabling error correction to be ready beforehand when low-voltage operations occur.
Solution Approach 2:
The patent introduces an intermediary mechanism in the form of correction data and ECC code that mediates between the unreliable low-voltage memory operation and the required data integrity. The correction data acts as an intermediary that can compensate for errors introduced during low-voltage storage and retrieval operations.
2Quantity of substance
If semiconductor device size is decreased to increase storage capacity, then storage density is improved, but operation voltage range becomes narrower
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the operation mode based on voltage conditions. The controller detects voltage levels and switches between normal mode and repair mode, changing operational parameters such as enabling/disabling ECC functions and selecting different data paths based on the detected voltage condition.
3Reliability
If ECC function and row redundancy are enabled to correct errors, then data reliability is improved, but area overhead increases
Solution Approach 1:
The patent applies partial action by selectively enabling ECC and row redundancy functions only when needed. The controller determines whether to activate these error correction mechanisms based on detected voltage conditions, enabling them during low-voltage operations where errors are more likely, and disabling them during normal operations to minimize area overhead.
Data Source
AI summary
A controller of a memory device which accesses a memory of the memory device having a data storage area and a data correction area. The controller includes a mode selection unit When the memory works with a first operation voltage, the mode selection unit selects a first mode of the controller, and the controller writes input data into the data storage area to serve as storage data and reads the storage data from the data storage area. When the memory works with a second operation voltage, the mode selection unit selects a second mode of the controller, and the controller performs a correction function to encode the input data to generate encoded input data, writes the encoded input data into the data storage area and the data correction area to respectively serve as the storage data and correction data, and reads and decodes the storage data and the correction data.