Memory Data Correction via Single Command Multi-Operation
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Solution Overview
Problem
Existing memory systems face complexity in handling multiple error control commands, which complicates the performance of host systems and can lead to data errors due to shifting or expanding voltage distributions in memory cells.
Innovation Solution
A single error control command initiates a procedure that includes multiple error control operations, such as read retry and auto read calibration, allowing the memory system to automatically adjust reference voltages to correct data errors without requiring additional commands, by analyzing voltage distributions and shifting the reference voltage to maintain accurate data retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple error control commands are used to correct data errors, then data retrieval accuracy is improved, but host system complexity and operational difficulty increase
Solution Approach 1:
The patent combines multiple error control operations (read retry with reference voltage adjustment and auto read calibration) into a single unified error control command. When the host system issues one error control command, the memory system automatically executes both operations sequentially, eliminating the need for the host to manage multiple separate commands and reducing operational complexity while maintaining data retrieval accuracy
Solution Approach 2:
The memory system performs self-service by automatically executing multiple error control operations in response to a single command from the host. The memory system independently determines when to perform read retry operations with adjusted reference voltages and when to initiate auto read calibration procedures, freeing the host system from the burden of managing complex error correction sequences
2Measurement precision
If reference voltage is adjusted to correct data errors, then data retrieval accuracy is improved, but voltage distribution stability deteriorates
Solution Approach 1:
The patent implements periodic action by cycling through read retry operations with adjusted reference voltages and auto read calibration procedures. When data errors are detected, the system performs read retry with modified reference voltages, and if errors persist, it triggers auto read calibration to重新 establish stable voltage distributions. This periodic alternation between adjustment and stabilization maintains both retrieval accuracy and voltage stability
Solution Approach 2:
The system employs feedback mechanisms where the results of read operations are continuously monitored. When data errors are detected, the system adjusts reference voltages and performs calibration operations. After each adjustment, the system verifies whether errors are corrected, and only when stable error-free reads are achieved does it return to normal operation, ensuring voltage distribution stability is restored before proceeding
Data Source
AI summary
Methods, systems, and devices for memory data correction using multiple error control operations are described. A single command may be received to correct an error detected in data stored by a memory array. A first error control operation and a second error control operation may be implemented based on the single command. The first error control operation may be performed on the data stored by the memory array using one or more different reference voltages to read the data. The error may be determined to remain in the data after performing the first error control operation. The second error control operation may then be performed on the data stored by the memory array. The second error control operation may use one or more voltage distributions associated with the memory cells of the memory array.