Semiconductor Memory Data Path Controller DDR Timing
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Solution Overview
Problem
Conventional semiconductor memory devices face challenges in reducing current consumption while maintaining data output speed, particularly due to the presence of multiple transmission gates that increase chip size and cost.
Innovation Solution
A semiconductor memory device with a data output circuit that uses a data path controller with delay elements along data path lines to delay data output, eliminating unnecessary transmission gates and reducing current consumption without decreasing data output speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple transmission gates are used to enable parallel data paths for DDR operation, then data bandwidth is improved, but current consumption and chip size increase
Solution Approach 1:
The patent implements DDR operation by using periodic clock edges (rising and falling edges) to control data transmission. The data path controller enables data to be transmitted on both edges of the clock signal, effectively doubling the data bandwidth without requiring continuous activation of all data paths. This periodic action allows the same physical infrastructure to be reused alternately for different data transmissions, reducing current consumption compared to continuously active parallel paths.
Solution Approach 2:
The patent employs dynamic control of data path activation through the data path controller. Instead of having all transmission gates continuously active, the controller dynamically enables only the necessary data paths at specific clock edges. This dynamic activation reduces the overall current consumption while maintaining the required data bandwidth by activating paths only when needed rather than continuously.
2Productivity
If multiple transmission gates are used to enable parallel data paths for DDR operation, then data bandwidth is improved, but device complexity increases
Solution Approach 1:
The patent merges the control functions of multiple transmission gates into a single data path controller. Instead of having separate control logic for each transmission gate, the data path controller consolidates these functions and manages multiple data paths through a unified control mechanism. This merging reduces the overall device complexity and chip size while still enabling parallel data transmission capabilities for DDR operation.
Solution Approach 2:
The data path controller serves multiple functions: it manages both rising and falling edge data transmissions, controls multiple data paths, and coordinates with the sense amplifiers. This multi-functional approach eliminates the need for separate dedicated control circuits for each function, thereby reducing device complexity and chip size while maintaining the required data bandwidth for DDR operation.
3Speed
If data is transmitted on both rising and falling edges of the clock signal, then data access speed is improved, but synchronization difficulty increases
Solution Approach 1:
The data path controller implements feedback mechanisms to monitor and adjust the timing of data transmissions on both rising and falling clock edges. By using feedback from the clock signal and data path status, the controller maintains precise synchronization without requiring overly complex external control logic. This feedback-based approach simplifies the overall synchronization system while enabling high-speed DDR operation.
Solution Approach 2:
The data path controller acts as an intermediary between the sense amplifiers and the output buffers, managing the timing and coordination of data transmissions on both clock edges. This intermediary role centralizes the synchronization complexity within a single control unit rather than distributing it across multiple components, thereby reducing overall system complexity while maintaining high data access speed through coordinated dual-edge transmission.
Data Source
AI summary
A semiconductor memory device and a related method are disclosed. The semiconductor memory device includes a data sensing output unit simultaneously providing first and second data to first and second data path lines, respectively; and a data output circuit, wherein the first and second data are serially output to an output terminal through the data output circuit. The device further includes a data transmitter operationally connecting the first data path line to the data output circuit and operationally connecting the second data path line to the data output circuit; and a data path controller connected between the data sensing output unit and the data transmitter, delaying the second data, and including first and second delay elements, wherein each of the first and second delay elements is disposed along one of the first and second data path lines.


