Semiconductor Memory Device Parasitic Capacitance Uniformity
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high operational reliability due to uneven parasitic capacitances between bit lines, which affect data storage and retrieval efficiency.
Innovation Solution
The semiconductor memory device design includes a stacked structure with channel structures and bit lines arranged such that channel structures are connected to bit lines in a way that maintains uniform parasitic capacitances, achieved through specific arrangements of channel rows and contact rows relative to the gate isolation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If channel structures are arranged asymmetrically relative to bit lines, then device complexity is reduced, but parasitic capacitances become uneven
Solution Approach 1:
The patent applies asymmetry in reverse - it deliberately creates a symmetric arrangement where channel structures are positioned at equal distances from the gate isolation layer on both sides. This symmetric configuration ensures that parasitic capacitances between bit lines and channel structures are uniform, thereby improving operational reliability while maintaining manageable device complexity through regular, repeating patterns.
2Area of stationary object
If channel structures are positioned closer to gate isolation layer, then area is reduced, but parasitic capacitance uniformity deteriorates
Solution Approach 1:
The patent applies local quality by positioning channel structures at specific distances from the gate isolation layer - specifically, at equal distances on both sides of the gate isolation layer. This localized positioning strategy ensures that parasitic capacitances remain uniform in the critical region near the gate isolation layer, while still achieving compact device area through optimized spacing.
Data Source
AI summary
A semiconductor memory device includes: a stacked structure including first and second select patterns spaced apart from each other in a first direction; a gate isolation layer extending in a second direction intersecting the first direction between the first and second select patterns; channel structures penetrating the stack structure; and first and second bit lines extending in the first direction, the first and second bit lines being adjacent to each other. The channel structures include: a first channel structure which penetrates the first select pattern and is spaced apart by a first distance from the gate isolation layer in the first direction; and a second channel structure which penetrates the second select pattern and is spaced apart by substantially the first distance from the gate isolation layer in the first direction. The first and second channel structures are respectively connected to the second and first bit lines.