Solid-State Devices TRIZ Cases

A light-emitting arrangement uses a deflection element to guide radiation from a semiconductor chip to conversion elements spaced laterally on a carrier.

A dual brightness enhancement film redirects light from quantum dot sealant layers using refractive and scattering mechanisms.

A silicon oxynitride resistance change layer enables stable silver filament formation in nonvolatile memory devices.

A trench gate electrode applies voltage to control minority carrier concentration in the drift region of a reverse conducting semiconductor device.

Stacking transparent electrodes creates auxiliary capacitance in liquid crystal displays, resolving resolution trade-offs.

A distributed Bragg reflector minimizes light disturbance between adjacent devices in high-density arrays.

Alternately arrayed electrodes and resistive variable patterns extend upwards by a predetermined height from the substrate.

Mesa trench and implant isolate pixel diffusion areas, reducing cross-talk and dark current in fine pitch arrays.

Nano-structured grating modifies refractive index in organic electroluminescent layer to enhance light extraction efficiency.

A white color filter with neutral density transmittance controls reflected light hue in display devices.

A semiconductor data transfer unit drives signals to an intermediate voltage level to accelerate global bus operations.

Alternating first and second lead lines with contact windows reduce display panel dimensions while preventing short circuits between adjacent traces.

A thermal switch shunts current from a semiconductor light emitting device to prevent catastrophic failure caused by overheating junction temperatures.

A conjugated polymer composition serves as a stable hole-transport buffer layer in organic electroluminescent devices.

Segmenting the spacer with an oxide layer over the channel prevents threshold voltage shifts caused by charge trapping during read and write operations.

A multi-layer connection pad uses a removable cladding layer to shield intermediate conductive structures during chip attachment.

A radiation detector separates pixel and sensor arrays onto distinct substrates to enable independent manufacturing.

Composite organic materials improve luminance and stability by optimizing charge recombination while managing device complexity.

Diffusing electron injection material into a hole injection layer adjusts hole transport, improving carrier balance and device lifespan.

A light absorbing pattern fills gaps between display modules, eliminating image degradation from light leakage in large screens.

A pyrene-based electron transport compound improves brightness and reduces driving voltage in organic light emitting devices.

Heat treatment and modified strippers remove photoresist layers in under 6.5 minutes, preventing electrode damage during array substrate manufacturing.

Auxiliary layers in light-emitting diodes lower energy barriers for hole transfer, balancing carrier density without charge-generation materials.

Square-planar transition metal complexes replace expensive dopants in hole transport layers, reducing production costs while maintaining high conductivity.

A stacked image sensor divides light detection into three wavelength-specific devices to reduce color signal distortion in compact designs.

A vertical pillar structure uses lattice mismatch to apply compressive stress on the channel region of a PMOS transistor.

Segmented overlapping regions in a thin film transistor substrate reduce parasitic capacitance while maintaining liquid crystal molecule tilt consistency.

Segmenting contacts on a continuous electrode provides uniform electric fields and reduces device complexity compared to fully segmented designs.

Stacking gate patterns vertically increases integration density while preserving tunnel insulating layer durability through local quality differentiation.

Segmenting the charge generation layer and inserting an intermediary insulating layer blocks lateral leakage current in organic electroluminescent displays.

A copper complex dopant enhances charge carrier mobility in organic layer structures.

Removing photoresist masks from silicon nitride etching resolves selectivity conflicts, enabling vertical sidewalls and sub-lithography fin pitch.

A semiconductor memory device forms Schottky junctions between channel and select gates to enhance operational speed.

A light-blocking pattern step overlaps an organic protrusion in the non-display area to prevent substrate adherence and ensure uniform liquid crystal filling.

A light emitting device employs a reflective material covering package corners to minimize light absorption losses and improve efficiency.

A photoelectric conversion pixel structure uses heavy ion implantation to create intra-pixel isolation regions between adjacent photodiodes.

Groove structures prevent underfill resin outflow between stacked chips, reducing device thickness and wasted space.

Angled etching trims redeposited metal from barrier layers using a dielectric spacer, eliminating short circuits in STT-MRAM devices.

Stacked semiconductor memory device maintains uniform parasitic capacitances between bit lines and channel structures.

Singulating a composite with molding compound fills interstices between connecting surfaces to form individual optoelectronic semiconductor components.

Auxiliary gate insulating patterns suppress charge migration to improve data retention and reliability in 3D semiconductor memory devices.

Etching semiconductor substrates to form pillar-type channel regions prevents neck-shaped collapse and protects gate electrodes from misalignment damage.

Suspension elements decouple the deformable membrane from the substrate contact portion, reducing stress-induced errors during mounting.

A layout modification method calculates uniformity of critical dimensions in patterned layers to generate a modified semiconductor device layout.

Three segmented emitting parts in a tandem organic light emitting device improve color reproduction and efficiency by optimizing layer positions.

Monometallic metal complexes with hexadentate tripodal ligands coordinate to a metal center via three bidentate sub-ligands joined by a bridge.

A damascene pattern with a wider upper entry region prevents overhang and voids during gap filling, improving contact quality between plugs and bit lines.

An array substrate integrates ultrasonic emission and reception sensors into the display structure to enable biometric identification.

Isosceles trapezium patterns grow nanowires into bridges, resolving slow response times and complex fabrication steps.

Color filters combine fluorescent dyes with shaped nanoparticles to generate surface plasmon resonance for enhanced light emission.

Bending the touch sensing film inward creates nested layers that shrink peripheral area length while preventing electrode exposure.

Segmenting the via hole into stepped portions reduces parasitic capacitance while preventing pixel electrode fracture at high axial heights.

Segmented charge auxiliary layers and optimized microcavity distances resolve low light extraction efficiency while maintaining color purity.

A package cover plate groove positions a flexible printed circuit within a recessed area to reduce right-angle-edge thickness.

A wide band gap layer suppresses hole diffusion in infrared light emitting devices to reduce dark current.

A nanopatterned metal reflection layer modulates incident light phase to enhance color conversion efficiency in organic light emitting devices.

A flexible display device uses a segmented substrate with a specific bending portion width to prevent film layer interference.

Bridged bicyclic compounds reduce the energy gap between excited states, converting non-emissive triplet excitons into singlet states via thermal activation.

A tandem organic electroluminescent device uses a specific connection layer to balance electron and hole injection efficiency.

Segmenting ground potential control suppresses leakage currents while maintaining retention characteristics under PVT variations.

Alternating antiferroelectric layers decouple adjacent cells, reducing program disturb while enabling higher bit densities in scaled nodes.

A protrusion electrode pattern made of conductive polymer material generates a horizontal electric field in blue phase liquid crystal displays.

A display substrate integrates vibrators and identification units within the screen area to generate and detect ultrasonic signals for biometric sensing.

Self-aligned gate metal reduces photo-mask counts from seven to six, lowering costs and improving yield in LTPS TFT OLED panels.

An inverse substrate template transfers patterns to a semiconductor layer, eliminating lithography alignment and reducing damage risk.

Segmented blue light-emitting layers with composite materials boost brightness while reducing energy consumption.

Partitioning rows across independent memory banks resolves coarse granularity issues in traditional designs.

A two-layer interlayer insulating film structure with a fast etching upper layer prevents moisture ingress into display devices.

A thermal detector uses spectrally selective absorption materials to capture signal wavelengths while resisting primary thermal emission bands.

Fishbone dielectric structures prevent insulating layer collapse and metal post bridging in high-density 3D memory stacks.

A thin film transistor array substrate uses a multi-layer buffer structure to enable stretchable display characteristics.

Different dielectric constants in spacers stabilize threshold voltages across series-coupled memory cells.

An organic electroluminescent compound with a refractive index of about 1.8 or greater improves light extraction efficiency and color purity.

A redundant circuit uses parallel transistors with distinct conductance to detect defective memory units and trigger replacement.

Selective grain size control in recrystallized gate layers resolves NMOS tensile and PMOS compressive stress conflicts without adding manufacturing complexity.

Dynamic parameter modification corrects resistance shifts from erased neighbors, reducing wear imbalance and extending block lifespan.

SnO2-based shielding layers prevent polarizer chemical reactions and reduce reflectance in lateral electric field liquid crystal displays.

Low contractive force protective films reduce liquid crystal cell distortion under thermal stress by minimizing residual strain on the glass substrate.

Embossing pad electrodes compensates for step non-uniformity to ensure reliable signal transfer in high-humidity environments.

A photopolymerizable resin composition uses a barrier layer to separate first and second layers during device manufacturing.

A second bank with a contact angle of 5° or smaller ensures continuous coverage of charge transport layers across gap areas in organic light-emitting devices.

Voids between conductive structures in vertical stacks reduce capacitive coupling and cross-talk, improving NAND memory performance.

Segmented air gaps reduce coupling capacitance between orthogonal word-lines, mitigating bridging effects in high-density 3D memory.

Segmented nitride semiconductor stacks with a connection layer allow bidirectional current flow, enabling stable operation in AC power environments.

Transfer RGB LEDs via stamping processor to glass substrates, bypassing high-temperature melting constraints.

A merged spacer structure in OLED logic devices enlarges the gate-to-drain distance to suppress leakage currents.

Multi-layer masking creates pitch-reduced contact vias, resolving density mismatches with connected features.

A memory gate driver circuitry generates distinct voltage levels to operate flash memory cells concurrently.

An InP substrate photodetector reduces dark current and noise by absorbing ambient near-infrared radiation without auxiliary illumination.

A photodiode structure incorporates a localized n-- semiconductor region to facilitate charge movement within the transfer path.

Zirconium doping in Sb2Te3 superlattice layers increases low-state resistance, reducing reset current and power consumption.

A selection transistor features a gate electrode with recessed sidewalls defining a T-shaped cross section to enable efficient data storage.

A 3D semiconductor device shares global word lines across transistors to reduce chip area.

A localized isolation layer reduces tangential pull stress during bending to prevent passivation layer peeling while maintaining oxygen blocking integrity.

Segmented anode electrodes isolate particle-induced shorts in display subpixels to maintain uniform light emission across the panel.

A differential readout architecture separates reference and detection signals to cancel parasitic noise in optical fingerprint sensors.

Integrating a second pn junction into the silicon substrate manages reverse overcurrents, maintaining high breakdown voltage without external protective diodes.

A mask with a contact part and edge part covers an EL display panel.

A chromaticity adjusting layer with lower fluorescent concentration corrects light emission uniformity in semiconductor devices.