Thin Film Transistor Array Substrate with Multi-Layer Buffer for Stretchable Displays
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Solution Overview
Problem
Existing display devices face challenges in maintaining performance while allowing for shape changes, such as in foldable, rollable, or stretchable displays, due to the limitations of traditional substrate structures.
Innovation Solution
A substrate structure comprising a first buffer layer with a curved top surface, a second buffer layer made of metal oxide along the shape of the top surface, and a third buffer layer thicker than the second, with thin film transistors disposed on the third layer, allowing for flexible and deformable display devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a traditional flat substrate structure is used, then manufacturing is simple, but the display device cannot change shape
Solution Approach 1:
The substrate structure is segmented into multiple buffer layers (first buffer layer, second buffer layer, third buffer layer) with different functions and thicknesses. The first buffer layer provides flexibility for shape change, the second buffer layer prevents cracks, and the third buffer layer maintains TFT performance, allowing the display device to change shape while maintaining structural integrity
Solution Approach 2:
The patent uses composite material structures with different buffer layers having different properties. The first buffer layer is designed to be flexible for shape change, while subsequent layers provide structural support and protection, creating a composite structure that combines flexibility with structural integrity
2Adaptability or versatility
If the substrate is made flexible for shape change, then adaptability improves, but cracks may occur during heat treatment
Solution Approach 1:
The second buffer layer is disposed between the first buffer layer and the third buffer layer to prevent cracks in advance. This intermediate layer acts as a cushioning layer that absorbs stress during heat treatment and shape changes, preventing crack propagation from the flexible first buffer layer to the rigid third buffer layer and TFT structures
Solution Approach 2:
The multi-layer buffer structure combines materials with different mechanical properties, where the first buffer layer provides flexibility, the second buffer layer provides crack resistance, and the third buffer layer provides structural support, creating a composite structure that simultaneously achieves flexibility and crack resistance
3Adaptability or versatility
If buffer layers are added to enable shape change, then flexibility improves, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
Each buffer layer is designed with specific local qualities: the first buffer layer has curved top surface for flexibility, the second buffer layer is optimized for crack prevention, and the third buffer layer is made thicker than the second layer to ensure TFT performance. This localized optimization of each layer's properties maintains manufacturing precision while achieving overall deformability
Solution Approach 2:
The patent addresses manufacturing precision challenges by transitioning from a two-dimensional flat structure to a three-dimensional multi-layer structure with varying thicknesses and curved surfaces. The first buffer layer has a curved top surface with varying thickness, and the subsequent layers follow this curvature, allowing the structure to deform in three dimensions while maintaining controlled manufacturing parameters for each layer
Data Source
AI summary
Embodiments of the present disclosure relate to a thin film transistor array substrate and a display device. Since a wavy structure is formed through heat treatment in a structure in which a first buffer layer made of an organic material, a second buffer layer made of a metal oxide and a third buffer layer made of an inorganic material are stacked, it is possible to provide a display device including an array substrate which has stretchable characteristics through the wavy structure while preventing a crack from occurring in the third buffer layer and preventing characteristics of thin film transistors disposed on the third buffer layer from degrading.