Nitride Semiconductor Stacked Light Emitting Devices for AC Power
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Solution Overview
Problem
Existing light emitting devices are primarily designed for DC power operation, limiting their application in AC power environments, such as in some lighting systems and communication units.
Innovation Solution
A light emitting device package and system that utilizes a horizontal structure with nitride semiconductors and a connection layer to facilitate AC power operation, including a current blocking layer and transparent electrodes for efficient energy distribution and light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If light emitting devices are designed for DC power operation, then they achieve stable light emission, but they cannot be applied in AC power environments
Solution Approach 1:
The light emitting device is segmented into multiple independent light emitting elements (first light emitting element and second light emitting element) with different conductivity types. Each element can be independently controlled to emit light during different half-cycles of the AC power supply, enabling AC power compatibility while maintaining stable light emission through coordinated operation of the segmented elements.
Solution Approach 2:
Different regions of the device (first light emitting element with first conductivity type and second light emitting element with second conductivity type) are assigned different electrical properties. This local quality differentiation allows each element to respond appropriately to different polarities of AC power, resolving the contradiction between AC adaptability and operational stability.
2Adaptability or versatility
If a horizontal structure with multiple nitride semiconductors is used, then AC power operation is enabled, but device complexity increases
Solution Approach 1:
Multiple light emitting elements with different conductivity types are merged into a single horizontal device structure, sharing common electrodes and substrate. This combining approach enables AC power operation through the integrated structure while avoiding the complexity of completely separate devices, as the elements work together within a unified package.
Solution Approach 2:
The horizontal device structure serves multiple functions: it accommodates both first and second conductivity type light emitting elements, provides common electrical connections for AC power input, and enables coordinated light emission from multiple elements. This multi-functionality reduces overall device complexity compared to separate single-function devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the use of light emitting devices in AC power systems, increasing light and energy output by allowing current to flow in different directions through the active layers, enhancing their performance and efficiency.
Implementation Method 1
Light emitting devices, such as light emitting diodes or laser diodes using group III-V or II-VI compound semiconductor materials, produce light of various colors
Data Source
Figure 1A~1C
Figure 1D~1F
Figure 1G~1H
AI summary
Disclosed herein is a light emitting device including a first nitride semiconductor stack and a second nitride semiconductor stack each of which includes a first conductivity-type semiconductor layer (120,220), an active layer (130,230) and a second conductivity-type semiconductor layer (140,240), and a connection layer (250) formed between the second conductivity-type semiconductor layer (240) of the second nitride semiconductor stack and the first conductivity-type semiconductor layer (120) of the first nitride semiconductor stack, wherein the first nitride semiconductor and the second nitride semiconductor are connected by the connection layer, and the light emitting device further comprises electrodes (270) formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor. The light emitting device may be driven using AC power.