Semiconductor Memory Device Local Temperature Control
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Solution Overview
Problem
Semiconductor memory devices face challenges in maintaining optimal operating temperatures due to temperature gradients within the device and variations in operating conditions, leading to data loss and excessive power consumption when controlled based on a single representative temperature.
Innovation Solution
A semiconductor memory device with separate temperature estimation and control units for different memory sub-regions, using temperature information to adjust refresh periods and control voltages independently for each region, thereby optimizing operations based on localized temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single representative temperature is used to control the entire semiconductor memory device, then the control logic is simple, but data loss occurs in high-temperature regions and excessive power is consumed in low-temperature regions
Solution Approach 1:
The memory device is divided into multiple memory sub-regions (first memory sub region and second memory sub region), each with its own temperature estimation and control units. This segmentation allows independent temperature-based control for each region, preventing data loss in high-temperature areas while avoiding excessive refresh operations in low-temperature areas, thus resolving the contradiction between control simplicity and data reliability.
Solution Approach 2:
Each memory sub-region is equipped with local temperature estimation and control capabilities tailored to its specific thermal conditions. The first memory sub region uses a first temperature estimation unit and first control unit, while the second memory sub region uses a second temperature estimation unit and second control unit. This local quality approach ensures that each region operates optimally according to its own temperature characteristics, improving reliability without requiring overly complex global control logic.
2Reliability
If the refresh period is shortened to prevent data loss in high-temperature regions, then data reliability improves, but power consumption increases due to frequent refresh operations in all regions
Solution Approach 1:
The patent implements local quality by allowing different memory sub-regions to operate with different refresh periods based on their respective temperatures. The first memory sub region can use a shorter refresh period when its temperature is high, while the second memory sub region can use a longer refresh period when its temperature is low. This resolves the contradiction by ensuring data reliability where needed while avoiding unnecessary power consumption in cooler regions.
Solution Approach 2:
The refresh period is made dynamic and adaptive to temperature conditions in each memory sub-region. The temperature estimation units continuously monitor temperature, and the control units adjust refresh periods accordingly - shortening refresh periods when temperature increases and lengthening them when temperature decreases. This dynamic approach ensures data reliability during high-temperature operation while reducing power consumption during low-temperature operation.
3Measurement precision
If multiple temperature sensors are installed in different memory regions to achieve precise temperature control, then temperature measurement accuracy improves, but device area increases
Solution Approach 1:
The patent uses an intermediary approach by introducing temperature estimation units that can infer the temperature of entire memory sub-regions based on measurements from representative locations. Rather than placing sensors throughout every region, the estimation units use mathematical models and relationship information to accurately estimate temperatures across each sub-region, achieving high measurement precision without the area overhead of dense sensor placement.
Data Source
AI summary
A semiconductor memory device includes: a memory unit including a first memory sub region including a first memory cell and a second memory sub region including a second memory cell; a temperature information obtaining unit that obtains temperature information; a temperature estimation unit that estimates a first temperature of the first memory sub region and a second temperature of the second memory sub region based on the temperature information; a first sub region control unit that controls the first memory sub region based on the first temperature; and a second sub region control unit that controls the second memory sub region based on the second temperature.