Memory Device Metal-Containing Region Reduces Operating Current
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Solution Overview
Problem
Memory devices using variable resistance elements face challenges in reducing operating current, which affects their efficiency and performance.
Innovation Solution
A memory device configuration featuring a stacked body with a first electrode, a second electrode, and an oxide layer, where the second electrode includes a semiconductor layer and a metal-containing region with specific metallic elements, and a nitrogen-containing region, allowing for low operating current through band offset and depletion layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a variable resistance element is used in the memory device, then the memory function is achieved, but the operating current is too high
Solution Approach 1:
The patent applies local quality by creating a nitrogen-containing region with specific properties (band offset and depletion layer) at the interface between the semiconductor layer and oxide layer. This localized region with different chemical composition and electrical properties suppresses electron flow only where needed, reducing operating current while maintaining memory functionality in the variable resistance element.
Solution Approach 2:
The nitrogen-containing region acts as an intermediary layer between the semiconductor layer and oxide layer. It mediates the electron flow by creating a depletion layer and band offset that selectively block electrons, thereby reducing operating current without completely preventing the memory function. This intermediary structure allows controlled electron suppression while preserving the variable resistance characteristic.
2Use of energy by moving object
If electron flow is suppressed to reduce operating current, then energy efficiency improves, but resistance characteristics may deteriorate
Solution Approach 1:
The patent changes the chemical composition parameter by introducing nitrogen into the semiconductor layer to form a nitrogen-containing region. This parameter change creates a depletion layer and band offset that suppress electron flow. The nitrogen concentration and distribution are controlled to achieve the desired balance between current suppression and resistance characteristics, allowing the memory device to maintain proper resistance states while reducing operating current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively reduces operating current by suppressing electron flow and maintaining resistance characteristics, enhancing the device's efficiency and performance.
Implementation Method 1
allowing for low operating current through band offset and depletion layer formation
Implementation Method 2
allowing for low operating current through band offset and depletion layer formation
Data Source
AI summary
According to one embodiment, a memory device includes a stacked body. The stacked body includes first and second electrodes, and an oxide layer provided between the first and second electrodes. The second electrode includes a semiconductor layer, and a metal-containing region including at least one of first or second metallic element and being provided between at least a portion of the semiconductor layer and at least a portion of the oxide layer. The first metallic element includes at least one selected from Pt, Pd, Ir, Ru, Re, and Os. The second metallic element includes at least one selected Ti, W, Mo, and Ta. The stacked body has first and second states. The first state is obtained by causing a current to flow in the stacked body from the second toward first electrode. The second state is obtained by causing a current to flow from the first toward second electrode.