Semiconductor Memory Device Thermal Deformation Compensation
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Solution Overview
Problem
Current stacked type semiconductor memory devices face challenges in achieving higher integration due to thermal deformation and positional misalignment of components during manufacturing, which affects the integration and performance of memory cells.
Innovation Solution
The semiconductor memory device employs a stacked body with alternating electrode and insulating films, where separation members are strategically positioned to adjust for thermal expansion and maintain consistent distances between components, allowing for increased integration and flexibility in design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If stacked type semiconductor memory device integrates memory cells three-dimensionally, then integration density increases, but thermal deformation and positional misalignment occur during manufacturing
Solution Approach 1:
The patent introduces a separation member with adjustable thickness to compensate for thermal expansion differences. By changing the physical parameter (thickness) of the separation member, the patent adjusts the positional relationship between electrode films after thermal deformation occurs during manufacturing, thereby maintaining manufacturing precision while achieving high integration density
Solution Approach 2:
The separation member acts as an intermediary element positioned between the first electrode film and the second electrode film. This intermediary component absorbs and compensates for thermal deformation, preventing direct positional misalignment between the electrode films and enabling high integration density without sacrificing manufacturing precision
2Manufacturing precision
If separation members are added to adjust thermal expansion, then positional consistency is maintained, but device structure becomes more complex
Solution Approach 1:
The separation member is integrated into the existing stacked body structure, merging the thermal compensation function with the existing electrode film and insulating film layers. This combination approach maintains positional consistency while minimizing the increase in device complexity by incorporating the separation member as part of the overall stacked architecture rather than as a separate external component
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the integration of semiconductor memory devices by maintaining consistent positional relationships between components, even with thermal deformation, thereby improving the device's performance and integration density.
Implementation Method 1
a separation member extending in a first direction and a second direction that are different from the third direction, wherein at least a portion of the separation member contacting the electrode films is insulative
Data Source
AI summary
A semiconductor memory device includes a stacked body, a semiconductor member, a charge storage member, a first member, and second members. The stacked body includes electrode films arranged to be separated from each other along a first direction. A terrace is formed for each electrode film in an end portion of the stacked body in a second direction. The first member spreads along the first direction and the second direction. The first member is provided inside the cell portion. The second members are provided inside the end portion. The electrode film includes two portions separated from each other in a third direction. The two portions are separated in the third direction by the first member and the plurality of second members. An insulator between the electrode films is formed continuously between two sides of the plurality of second members in the third direction.