Memory Drive Circuit for Write Timing Margin Control

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Solution Overview

Problem

Existing memory devices face challenges in achieving an optimal timing margin for writing data, leading to inefficiencies and potential unintended current flow that can affect data integrity and speed.

Innovation Solution

A memory device with a drive circuit, pre-charge circuit, and equalizer that are controlled by specific control signals to ensure precise timing, automatically disabling the pre-charge and equalizer when the drive circuit is enabled, thereby eliminating the need for a large timing margin and reducing unintended current flow.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a large timing margin is used between pre-charge control signal and write control signal, then unintended current flow is prevented, but data writing speed is reduced

Engineering Contradiction:
Improvedata integrityVSAvoiddata writing speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The control circuit uses feedback from the timing controller to dynamically adjust the timing margin between pre-charge control signal and write control signal. The control circuit monitors signal states and automatically modifies timing parameters to optimize both data integrity and writing speed, resolving the contradiction between reliability and speed.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent implements dynamic timing adjustment where the timing margin is not fixed but can be modified based on operational conditions. The control circuit dynamically changes the time difference between control signals to achieve optimal performance, allowing the system to adapt between safety and speed requirements.

Inventive Principle:
Principle #15Dynamics

2Device complexity

If the pre-charge circuit and equalizer remain enabled during drive circuit operation, then circuit complexity is reduced, but unintended current flow occurs

Engineering Contradiction:
Improvecircuit control complexityVSAvoidunintended current flow
Core Design Contradiction:
Device complexityVSObject-generated harmful factors

Solution Approach 1:

The control circuit receives feedback signals indicating the state of the drive circuit and automatically adjusts the enable status of the pre-charge circuit and equalizer. This feedback mechanism prevents unintended current flow by ensuring proper circuit state management while maintaining manageable complexity through automated control.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The control circuit performs preliminary actions by pre-configuring the timing and enable states of different circuit components before data writing operations begin. This preliminary setup prevents unintended current flow by ensuring circuits are in appropriate states, reducing the need for complex real-time switching.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250299729A1Drive circuit with improved timing margin for memory device
Publication Date: 2025.09.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250299729A1 patent drawing
  • US20250299729A1 patent drawing
  • US20250299729A1 patent drawing

AI summary

Disclosed herein are related to a memory device. In one aspect, the memory device includes a drive circuit coupled to a first line and a second line. In one aspect, the drive circuit is configured to apply, according to a first control signal having a first state, a data signal to either one of the first line or the second line to write data at a memory cell. In one aspect, the memory device includes a pre-charge circuit configured to set, according to a second control signal having a second state, voltages at the first line and the second line to a predetermined voltage level. In one aspect, the memory device includes an equalizer configured to electrically decouple the first line from the second line, according to the first control signal having the first state and the second control signal having the second state.