Nonvolatile Memory ECC Switching Using On-Chip Syndrome Checking

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Solution Overview

Problem

Nonvolatile memory devices face issues with read errors due to distorted threshold voltage or resistance distributions caused by events like charge leakage and program disturbances, leading to incorrect data retrieval.

Innovation Solution

Incorporating an on-chip syndrome checker circuit in nonvolatile memory devices to generate a syndrome result value, allowing for efficient hard-decision or soft-decision ECC decoding based on the syndrome result, thereby reducing latency and improving performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If hard-decision ECC decoding is always performed, then error correction capability is maintained, but decoding latency increases and performance deteriorates

Engineering Contradiction:
Improveerror correction capabilityVSAvoiddecoding latency
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs syndrome calculation in advance before ECC decoding to predict error patterns. By calculating the syndrome value beforehand and comparing it with predetermined thresholds, the system can determine whether hard-decision or soft-decision decoding is needed before actually performing the decoding operation, thus avoiding unnecessary latency

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent dynamically selects between hard-decision and soft-decision ECC decoding based on the calculated syndrome result. When the syndrome value indicates low error probability (below threshold), hard-decision decoding is used for speed. When error probability is high (above threshold), soft-decision decoding is used for reliability. This dynamic adaptation resolves the contradiction between speed and reliability

Inventive Principle:
Principle #15Dynamics

2Reliability

If soft-decision ECC decoding is always performed, then error correction performance is improved, but computational complexity and processing time increase

Engineering Contradiction:
Improveerror correction performanceVSAvoidcomputational complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies soft-decision decoding only partially - specifically when the syndrome calculation indicates high error probability. For cases with low error probability, simpler hard-decision decoding suffices. This partial application of the more complex algorithm reduces overall computational complexity while maintaining error correction performance where needed

Inventive Principle:
Principle #16Partial or excessive action

3Loss of time

If syndrome checker circuit is integrated in nonvolatile memory device, then decoding latency is reduced, but device area increases

Engineering Contradiction:
ImproveECC decoding latencyVSAvoiddevice area
Core Design Contradiction:
Loss of timeVSArea of stationary object

Solution Approach 1:

The patent extracts only the essential syndrome calculation and threshold comparison functions from the full ECC decoding process and places them in the nonvolatile memory device. The more resource-intensive soft-decision decoding algorithm remains in the external memory controller. This selective extraction reduces the area overhead in the memory device while still achieving latency reduction by avoiding data transfer for error-free cases

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS20260072787A1Nonvolatile memory device, memory system and method of operating the same
Publication Date: 2026.03.12 SAMSUNG ELECTRONICS CO LTD
  • US20260072787A1 patent drawing
  • US20260072787A1 patent drawing
  • US20260072787A1 patent drawing

AI summary

A memory system includes a nonvolatile memory device including a memory cell array and an on-chip syndrome checker, and a memory controller including an error check code (ECC) decoder and configured to control operation of the nonvolatile memory device. The nonvolatile memory device is configured to sequentially read out and store hard-decision data and soft-decision data from the memory cell array based on one read command transferred from the memory controller. The on-chip syndrome checker of the nonvolatile memory device is configured to generate a syndrome result value by calculating a syndrome of the hard-decision data. The ECC decoder of the memory controller is configured to, depending on the syndrome result value, either perform hard-decision ECC decoding based on the hard-decision data or perform soft-decision ECC decoding based on the hard-decision data and the soft-decision data by omitting the hard-decision ECC decoding.