3D Nonvolatile Memory Electrode Recesses for Wiring Stability
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Solution Overview
Problem
The challenge in fabricating three-dimensional (3D) nonvolatile memory devices is achieving improved process stability, particularly in the formation of vertical wirings and recesses, which are critical for the integration and functionality of these devices.
Innovation Solution
The solution involves a specific electrode structure with laminated electrodes and strategically formed recesses on a substrate, where vertical wirings are only formed on certain side walls, and the recesses are designed to maintain structural integrity during planarization processes, ensuring that the side walls of the first recess do not collapse, thereby enhancing process stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vertical wirings are formed on all side walls of recesses, then electrical connectivity is improved, but structural stability deteriorates due to side wall collapse
Solution Approach 1:
The patent applies local quality by forming vertical wirings only on specific side walls (first and third side walls) of the recesses rather than all side walls. This selective approach maintains structural stability while achieving necessary electrical connectivity for the memory device operation.
Solution Approach 2:
The patent introduces asymmetry in the recess structure by forming different types of recesses (first recesses and second recesses) with different wiring configurations. First recesses have vertical wirings on two opposite side walls, while second recesses have vertical wirings on only one side wall, creating an asymmetric pattern that optimizes both connectivity and stability.
2Reliability
If recesses are formed deeply to expose electrodes for wiring, then electrical connection is improved, but manufacturing precision deteriorates due to process variability
Solution Approach 1:
The patent segments the electrode exposure into multiple recesses (first recesses and second recesses) at different locations and depths. This segmentation allows controlled exposure of electrodes while maintaining process stability, as each recess can be independently optimized for its specific wiring requirements.
Solution Approach 2:
The patent performs preliminary actions by forming the recesses and selecting specific side walls for wiring formation before completing the full electrode structure. This preliminary selection of wiring locations allows for optimized process stability while ensuring adequate electrode exposure for electrical connections.
3Productivity
If three-dimensional structure is implemented to increase integration, then device density is improved, but device complexity increases
Solution Approach 1:
The patent segments the three-dimensional electrode structure into multiple laminated electrodes and organized recesses, making the complex fabrication process more manageable. Each layer and recess can be processed independently with standardized procedures, reducing overall fabrication complexity while maintaining high integration.
Solution Approach 2:
The patent applies local quality by implementing different wiring configurations in different regions (first recesses vs. second recesses), allowing optimization of each local area for its specific function while managing overall device complexity through regional specialization.
Data Source
AI summary
A nonvolatile memory device including a substrate which includes a cell array region and a connection region, an electrode structure formed on the cell array region and the connection region and including a plurality of laminated electrodes, a first recess formed in the electrode structure on the connection region and disposed between the cell array region and a second recess formed in the electrode structure on the connection region, and a plurality of vertical wirings formed on the plurality of electrodes exposed by the first recess.