Semiconductor Nonvolatile Memory Element Voltage Regulation
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Solution Overview
Problem
Existing semiconductor integrated circuit devices face challenges in accurately regulating output voltage and monitoring power supply voltage fluctuations, requiring complex trimming methods and precise resistance ratio maintenance, which can be time-consuming and costly.
Innovation Solution
A semiconductor nonvolatile memory element is introduced, capable of regulating threshold voltage with high accuracy using external electrical signals, eliminating the need for laser trimming and allowing for online voltage regulation, thereby simplifying the process and reducing production time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser trimming is used to regulate output voltage, then manufacturing precision is improved, but productivity deteriorates due to time-consuming processing
Solution Approach 1:
The patent replaces the mechanical laser trimming process with an electrical regulation mechanism using a nonvolatile memory element. Instead of physically trimming resistance elements with laser beams, the invention uses electrical signals to change the threshold voltage of the memory element, which in turn regulates the output voltage through the voltage dividing circuit. This substitution eliminates the time-consuming laser processing step while maintaining precise voltage regulation.
Solution Approach 2:
The patent changes the operational parameter from physical trimming to electrical voltage threshold adjustment. By applying external electrical signals to change the threshold voltage of the nonvolatile memory element, the output voltage can be regulated without physical modification. This parameter change enables rapid adjustment and eliminates the need for slow laser trimming processes.
2Manufacturing precision
If complex trimming methods are used for voltage regulation, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent extracts the complex laser trimming process from the manufacturing workflow and replaces it with a simpler electrical regulation mechanism. The nonvolatile memory element serves as a standalone component that handles voltage regulation through electrical signals, removing the need for external laser trimming equipment and complex processing steps.
Solution Approach 2:
The nonvolatile memory element performs self-regulation of the output voltage through its threshold voltage characteristics. When external electrical signals are applied, the memory element automatically adjusts its threshold voltage to regulate the output, eliminating the need for complex external trimming mechanisms and reducing overall device complexity.
3Manufacturing precision
If resistance elements are precisely matched for voltage dividing circuit, then manufacturing precision is improved, but ease of manufacture deteriorates
Solution Approach 1:
The patent replaces the need for precisely matched resistance elements with an electrical regulation approach using the nonvolatile memory element. Instead of requiring careful matching of resistance ratios during fabrication, the invention uses electrical signals to adjust the threshold voltage of the memory element, which compensates for variations in resistance values and achieves precise voltage regulation without complex matching requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor nonvolatile memory element enables precise and efficient regulation of output voltage, improving yield and reducing the need for costly equipment, while maintaining stability across varying product forms and conditions.
Implementation Method 1
a semiconductor nonvolatile memory element that can change a threshold voltage through an externally applied electrical signal
Data Source
AI summary
A semiconductor nonvolatile memory element is used to form a constant current source in a semiconductor integrated circuit device. The semiconductor nonvolatile memory element includes a control gate electrode, a floating gate electrode, source/drain terminals, a thin first gate insulating film, and a second gate insulating film that is thick enough not to be broken down even when a voltage higher than an operating voltage of the semiconductor integrated circuit device is applied thereto, the first and second gate insulating films being formed below the control gate electrode. Thus, provided is a normally on type semiconductor nonvolatile memory element in which a threshold voltage can be regulated through injection of a large amount of charge with respect to the operating voltage from a drain terminal into the floating gate electrode via the second gate insulating film, and injected carriers do not leak in an operating voltage range.