3D Memory Gate Stack Layout With Polygonal Stepped Openings
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Solution Overview
Problem
Current three-dimensional semiconductor memory devices face challenges in enhancing the degree of integration due to limitations in the stacking and arrangement of conductive layers, which affects the efficiency and density of memory cell arrays.
Innovation Solution
The semiconductor memory device incorporates a gate stack structure with multiple sub-stepped structures at different levels, forming a stepped sidewall around polygonal openings, allowing for a more efficient arrangement of conductive layers and improved integration by reducing the area allocated to the stepped structure, thereby enhancing the packing density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the stacked number of memory cells is increased to improve degree of integration, then the degree of integration is improved, but the arrangement complexity and manufacturing difficulty increase
Solution Approach 1:
The gate electrode structure is segmented into multiple regions (first region, second region, third region, fourth region) with different stepped structures in each region. This allows independent optimization of each segment to simplify the overall arrangement complexity while maintaining high stacking density.
Solution Approach 2:
The patent introduces multi-level stepped structures that extend in multiple directions (first direction, second direction, third direction) rather than simple vertical stacking. This dimensional approach enables more efficient space utilization and reduces arrangement complexity by distributing memory cells across different spatial levels.
2Quantity of substance
If conventional stacking arrangements are used, then manufacturing is simpler, but the degree of integration and packing density are limited
Solution Approach 1:
The gate electrode structure employs asymmetric stepped configurations where different regions have different numbers and positions of steps. For example, the first region has a first stepped structure while the second region has a second stepped structure with different characteristics. This asymmetry maximizes integration density while maintaining manufacturability through standardized fabrication processes.
Solution Approach 2:
Each region of the gate electrode is given local quality characteristics with specific stepped structures tailored to that region's requirements. The first region through fourth region each have customized stepped configurations that optimize local packing density while allowing uniform manufacturing processes to be applied across the entire structure.
3Productivity
If uniform gate electrode structures are used across all regions, then manufacturing is easier, but the packing density and operational efficiency are reduced
Solution Approach 1:
The gate electrode structure implements local quality by providing different stepped structures in different regions (first region, second region, third region, fourth region). Each region's stepped structure is optimized for its specific functional requirements, enhancing operational efficiency while the overall structure remains manufacturable through systematic fabrication approaches.
Data Source
AI summary
A semiconductor memory device includes a gate stack structure including a plurality of conductive layers stacked to be spaced apart from each other in a first direction, the gate stack structure surrounding the periphery of a polygonal opening. The semiconductor memory device also includes a stepped structure formed along a sidewall of the polygonal opening.